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1. WO2020117939 - APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

Publication Number WO/2020/117939
Publication Date 11.06.2020
International Application No. PCT/US2019/064475
International Filing Date 04.12.2019
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
G02B 5/1857
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
18Diffraction gratings
1847Manufacturing methods
1857using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
H01J 2237/3341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
3341Reactive etching
H01J 37/32541
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32532Electrodes
32541Shape
H01J 37/32568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32532Electrodes
32568Relative arrangement or disposition of electrodes; moving means
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • KURUNCZI, Peter F.
  • EVANS, Morgan
  • OLSON, Joseph
Agents
  • CHAMBERLAIN, Jeffrey
  • ROY, Ronnen A.
Priority Data
62/776,72207.12.2018US
62/776,73407.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE
(FR) APPAREIL ET TECHNIQUES DE GRAVURE INCLINÉE À L'AIDE D'UNE SOURCE D'EXTRACTION À ÉLECTRODES MULTIPLES
Abstract
(EN)
A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.
(FR)
L'invention concerne une source de plasma qui peut comprendre une chambre à plasma, la chambre à plasma ayant un premier côté, définissant un premier plan et un ensemble d'extraction, disposé adjacent au côté de la chambre à plasma, l'ensemble d'extraction comprenant au moins deux électrodes. Une première électrode peut être disposée immédiatement adjacente au côté de la chambre à plasma, une seconde électrode définissant un déplacement vertical à partir de la première électrode le long d'une première direction, perpendiculaire au premier plan, la première électrode comprenant une première ouverture, et la seconde électrode comprenant une seconde ouverture. La première ouverture peut définir un déplacement latéral à partir de la seconde ouverture le long d'une seconde direction, parallèle au premier plan, le déplacement vertical et le déplacement latéral définissant un angle d'inclinaison non nul par rapport à une perpendiculaire au premier plan.
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