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1. WO2020117725 - METHOD FOR DEPOSITION OF HIGHLY SELECTIVE METAL FILMS

Publication Number WO/2020/117725
Publication Date 11.06.2020
International Application No. PCT/US2019/064113
International Filing Date 03.12.2019
IPC
C23C 16/18 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/45527
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45527characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
Applicants
  • MERCK PATENT GMBH [DE]/[DE]
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
Inventors
  • KANJOLIA, Ravindra
  • MOINPOUR, Mansour
  • WOODRUFF, Jacob
  • WOLF, Steven
  • BREEDEN, Michael
  • UEDA, Scott T.
  • KUMMEL, Andrew
  • ANURAG, Ashay
Agents
  • BRUSTEIN, Mitchell
  • HOULIHAN, Francis M.
  • SLAVEN, IV, William T.
Priority Data
62/774,69503.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR DEPOSITION OF HIGHLY SELECTIVE METAL FILMS
(FR) PROCÉDÉ DE DÉPÔT DE FILMS MÉTALLIQUES HAUTEMENT SÉLECTIFS
Abstract
(EN)
The present inventive concept relates to selective metal layer deposition. Embodiments include a method for atomic layer deposition (ALD) of a metal, the method comprising at least one cycle of: a) exposing a substrate, the substrate comprising a surface comprising a metal portion and an insulator portion, to a metal-organic precursor; b) depositing a metal-organic precursor on an upper surface of the metal portion of the substrate to selectively provide a metal precursor layer on the upper surface of the metal portion of the substrate; c) exposing the metal precursor layer to a co-reactant; and d) depositing the co-reactant on the metal precursor layer, wherein the co-reactant takes part in a ligand exchange with the metal precursor layer.
(FR)
Le présent concept de l'invention concerne le dépôt sélectif de couches métalliques. Des modes de réalisation comprennent un procédé de dépôt de couche atomique (ALD) d'un métal, le procédé comprenant au moins un cycle consistant à : a) exposer un substrat, le substrat comprenant une surface comprenant une partie métallique et une partie isolante, à un précurseur organométallique ; b) déposer un précurseur organométallique sur une surface supérieure de la partie métallique du substrat pour fournir sélectivement une couche de précurseur métallique sur la surface supérieure de la partie métallique du substrat ; c) exposer la couche de précurseur métallique à un co-réactif ; et d) déposer le co-réactif sur la couche de précurseur métallique, le co-réactif participant à un échange de ligand avec la couche de précurseur métallique.
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