Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020117679 - PIN DIODES WITH MULTI-THICKNESS INTRINSIC REGIONS

Publication Number WO/2020/117679
Publication Date 11.06.2020
International Application No. PCT/US2019/064018
International Filing Date 02.12.2019
IPC
H01L 27/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
H01L 29/868 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
868PIN diodes
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
CPC
H01L 27/0814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
0814Diodes only
H01L 29/66128
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
6609Diodes
66128Planar diodes
H01L 29/868
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
868PIN diodes
Applicants
  • MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC. [US]/[US]
Inventors
  • BOLES, Timothy Edward
  • BROGLE, James Joseph
  • BUKOWSKI, Joseph Gerard
  • BARTER, Margaret Mary
Agents
  • THOMAS | HORSTEMEYER LLP
Priority Data
62/774,57703.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PIN DIODES WITH MULTI-THICKNESS INTRINSIC REGIONS
(FR) DIODES PIN À RÉGIONS INTRINSÈQUES À ÉPAISSEURS MULTIPLES
Abstract
(EN)
A monolithic, vertical, planar semiconductor structure with a number diodes having different intrinsic regions is described. The diodes have intrinsic regions of different thicknesses as compared to each other. In one example, the semiconductor structure includes an N-type silicon substrate, an intrinsic layer formed on the N-type silicon substrate, and a dielectric layer formed on the intrinsic layer. A number of openings are formed in the dielectric layer. Multiple anodes are sequentially formed into the intrinsic layer through the openings formed in the dielectric layer. For example, a first P-type region is formed through a first one the openings to a first depth into the intrinsic layer, and a second P-type region is formed through a second one of the openings to a second depth into the intrinsic layer. Additional P-type regions can be formed to other depths.
(FR)
L'invention concerne une structure semi-conductrice plane, verticale et monolithique comprenant une pluralité de diodes ayant différentes régions intrinsèques. Les diodes ont des régions intrinsèques d'épaisseurs différentes comparées les unes aux autres. Dans un exemple, la structure semi-conductrice comprend un substrat de silicium de type N, une couche intrinsèque formée sur le substrat de silicium de type N, et une couche diélectrique formée sur la couche intrinsèque. Un nombre d'ouvertures est formé dans la couche diélectrique. De multiples anodes sont formées séquentiellement dans la couche intrinsèque à travers les ouvertures formées dans la couche diélectrique. Par exemple, une première région de type P est formée à travers une première ouverture à une première profondeur dans la couche intrinsèque, et une seconde région de type P est formée à travers une seconde ouverture à une seconde profondeur dans la couche intrinsèque. Des régions de type P supplémentaires peuvent être formées à d'autres profondeurs.
Latest bibliographic data on file with the International Bureau