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1. WO2020117566 - MULTI-LEVEL SIGNALING FOR A MEMORY DEVICE

Note: Text based on automatic Optical Character Recognition processes. Please use the PDF version for legal matters

[ EN ]

CLAIMS

What is claimed is:

1. A method, comprising:

receiving a first symbol and a second symbol of a signal that is modulated using a first modulation scheme that includes three or fewer levels;

translating the first symbol and the second symbol into a third symbol associated with a second modulation scheme that includes at least four levels; and

detecting an error in the signal based at least in part on translating the third symbol.

2. The method of claim 1, further comprising:

translating a mapping between at least one symbol of the signal modulated using the first modulation scheme and at least one symbol of the second modulation scheme, wherein translating the third symbol is based at least in part on the mapping.

3. The method of claim 2, further comprising:

receiving a second mapping between the at least one symbol of the first modulation scheme and the at least one symbol of the second modulation scheme, wherein translating the third symbol is based at least in part on the second mapping.

4. The method of claim 2, wherein:

receiving the signal further comprises receiving a plurality of signals over a plurality of pins of a memory device, wherein the plurality of signals comprises the signal; and

detecting the error further comprises determining whether each signal of the plurality of signals received over the plurality of pins includes one or more errors.

5. The method of claim 1, further comprising:

transmitting, to a tester, a message indicating the error detected in the signal based at least in part on translating the third symbol.

6. A method, comprising:

receiving, by a memory device, a first signal transmitted over a first conductive line of a plurality of conductive lines, the first signal comprising a first level and a second level and modulated using a first modulation scheme having three or fewer levels;

receiving, by the memory device, a second signal transmitted over a second conductive line of the plurality of conductive lines, the second signal comprising a third level and a fourth level and modulated using the first modulation scheme; and

determining, by the memory device, information about one or more symbols of a second modulation scheme having at least four levels based at least in part on receiving the first signal and receiving the second signal, the memory device being operable to receive one or more signals that are modulated using the second modulation scheme.

7. The method of claim 6, wherein the first level, the second level, the third level, and the fourth level correspond to at least four different levels of the second modulation scheme.

8. The method of claim 6, further comprising:

receiving, by the memory device from a driver, a third signal comprising at least one of the first level, the second level, the third level, or the fourth level over a third conductive line of the plurality of conductive lines, wherein determining the information about the one or more symbols of the second modulation scheme is based at least in part on receiving the third signal over the third conductive line.

9. The method of claim 8, wherein the first level and the second level are a first set of adjacent levels in the first modulation scheme and the third level and the fourth level are a second set of adjacent levels in the first modulation scheme.

10. The method of claim 8, wherein the first level and the second level are a first set of adjacent levels in the first modulation scheme and the third level and the fourth level are a second set of adjacent levels in the first modulation scheme, wherein at least one level of the first set of adjacent levels is included in the second set of adjacent levels.

11. The method of claim 6, wherein the first level and the second level of the first signal comprises a full swing of levels associated with the first modulation scheme or the second modulation scheme.

12. The method of claim 6, wherein the second signal is modulated using the second modulation scheme.

13. The method of claim 12, further comprising:

detecting interference on the second signal by the first signal, wherein the first signal is for inducing signals on other conductive lines.

14. The method of claim 6, wherein the first level and the second level comprise a full swing of levels associated with the second modulation scheme, and the third level and the fourth level are adjacent levels in the first modulation scheme between the first level and the second level.

15. A method, comprising:

receiving, by a memory device from a driver, a first signal comprising a first level, a second level, and a third level and modulated using a first modulation scheme having three or fewer levels;

receiving, by the memory device from the driver, a second signal comprising a fourth level and two levels from a set that comprises the first level, the second level, and the third level, the second signal modulated using the first modulation scheme; and

determining, by the memory device, information about one or more symbols of a second modulation scheme having at least four levels based at least in part on receiving the first level, the second level, the third level, the fourth level, and the two levels selected from the set, the memory device being operable to receive one or more signals modulated using the second modulation scheme.

16. The method of claim 15, wherein the first signal and the second signal include at least two of the same levels.

17. The method of claim 15, wherein the first signal and the second signal together comprise a full swing of levels associated with the second modulation scheme, or wherein the first signal comprises at least a full swing of levels associated with the second modulation scheme.

18. The method of claim 15, wherein the first signal comprises adjacent levels in the first modulation scheme and the second signal comprises adjacent levels in the first modulation scheme.

19. A method, comprising:

receiving, at a pin of a memory device from a first driver, a first signal modulated using a first modulation scheme having three or fewer levels over a first conductive line;

receiving, at the pin of the memory device from a second driver, a second signal modulated using the first modulation scheme having three or fewer levels over a second conductive line; and

determining, by the memory device, information about one or more symbols of a third modulation scheme having at least four levels based at least in part on receiving the first signal from the first driver and receiving the second signal from the second driver.

20. The method of claim 19, further comprising:

receiving, at the pin of the memory device from a third driver, a third signal modulated using the first modulation scheme having three or fewer levels over a third conductive line; and

determining, by the memory device, the information about the one or more symbols of the third modulation scheme based in part on receiving the first, second, and third signals.

21. The method of claim 20, wherein at least two of the first conductive line, the second conductive line, and the third conductive line are configured to receive signaling at the memory device and at least the other one of the first conductive line, the second conductive line, and the third conductive line is configured to transmit information from the memory device.

22. The method of claim 20, wherein the first and second conductive lines are input lines to the memory device and the first conductive line, the second conductive line, and the third conductive line are input and output lines to and from the memory device, respectively.

23. The method of claim 20, wherein the first signal comprises a first level and a second level that are adjacent to one another in the first modulation scheme, wherein the second signal comprises a third level, and wherein the third signal comprises a fourth level, and the third level and the fourth level comprise a full swing of levels associated with the third modulation scheme.

24. The method of claim 23, wherein the first level and the second level are different than the third level and the fourth level, or wherein one of the first level or the second level is the same as one of the third level or the fourth level.

25. The method of claim 19, further comprising:

receiving the first signal and the second signal during a same duration based at least in part on receiving the first signal and the second signal on the first conductive line and the second conductive line, respectively.

26. The method of claim 19, wherein:

the first signal comprises a first level and a second level that are adjacent to one another in the first modulation scheme; and

the second signal comprises a third level and a fourth level, wherein the third and the fourth level comprise a full swing of levels associated with the third modulation scheme.