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1. WO2020117556 - GAS SENSOR BASED ON THIOPHENE-BASED HIGH PERFORMANCE ORGANIC SEMICONDUCTING MATERIALS WITH LARGE SURFACE AREA VERTICAL DEVICE DESIGN

Publication Number WO/2020/117556
Publication Date 11.06.2020
International Application No. PCT/US2019/063218
International Filing Date 26.11.2019
IPC
H01L 51/05 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
G01N 27/414 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
CPC
G01N 27/4141
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4141specially adapted for gases
H01L 51/0035
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
H01L 51/0036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
H01L 51/0043
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0043Copolymers
H01L 51/055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
055characterised by the gate conductor
H01L 51/0558
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0558characterised by the channel of the transistor
Applicants
  • CORNING INCORPORATED [US]/[US]
  • SPRING FOUNDATION OF NATIONAL CHIAO TUNG UNIVERSITY [CN]/[CN]
Inventors
  • HE, Mingqian
  • LI, Yang
  • LIU, Hung-Chuan
  • MEHROTRA, Karan
  • MENG, Hsin-Fei
  • ZAN, Hsiao-Wen
Agents
  • PATHAK, Shantanu C.
Priority Data
201811480710.305.12.2018CN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GAS SENSOR BASED ON THIOPHENE-BASED HIGH PERFORMANCE ORGANIC SEMICONDUCTING MATERIALS WITH LARGE SURFACE AREA VERTICAL DEVICE DESIGN
(FR) CAPTEUR DE GAZ À BASE DE MATÉRIAUX SEMI-CONDUCTEURS ORGANIQUES HAUTE PERFORMANCE À BASE DE THIOPHÈNE PRÉSENTANT UNE CONCEPTION DE DISPOSITIF VERTICALE À GRANDE SURFACE
Abstract
(EN)
Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.
(FR)
L'invention porte sur des capteurs de gaz ultrasensibles à base de diode à semi-conducteur organique (OSC) à canal vertical, sur des procédés de fabrication de tels dispositifs et leurs utilisations. La couche de détection organique comprend un polymère organique à base de thiophène fondu qui connecte des électrodes supérieure et inférieure de façon à délivrer un flux de courant vertical. La structure d'électrode supérieure nanoporeuse permet le contact entre des molécules de gaz ambiant et le canal organique vertical. Le dispositif présente une haute sensibilité, est simple à traiter, et dispose d'une longue durée de conservation.
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