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1. WO2020117503 - ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE

Publication Number WO/2020/117503
Publication Date 11.06.2020
International Application No. PCT/US2019/062862
International Filing Date 22.11.2019
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • SHOEB, Juline
  • PATERSON, Alexander, Miller
  • WU, Ying
Agents
  • PATEL, Nishitkumar, V.
  • PENILLA, Albert, S.
Priority Data
62/775,73505.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE
(FR) GRAVURE DE CARACTÉRISTIQUES D'ISOLATION ET DE CARACTÉRISTIQUES DENSES À L'INTÉRIEUR D'UN SUBSTRAT
Abstract
(EN)
Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.
(FR)
L'invention concerne des systèmes et des procédés de gravure de différentes caractéristiques d'une manière sensiblement égale. L'un des procédés consiste à appliquer un signal de polarisation basse fréquence pendant un état de TCP faible et à appliquer un signal de polarisation haute fréquence pendant un état de TCP élevé. L'application du signal de polarisation basse fréquence pendant l'état de TCP faible facilite la génération de neutres chauds, qui sont utilisés pour augmenter un taux de gravure pour la gravure de caractéristiques denses par rapport à un taux de gravure pour des caractéristiques d'isolation de gravure. L'application du signal de polarisation haute fréquence pendant l'état de TCP élevé facilite la génération d'ions pour augmenter un taux de gravure pour la gravure des caractéristiques d'isolation par rapport à un taux de gravure pour la gravure des éléments denses. Après application du signal de polarisation basse fréquence pendant l'état de TCP faible et le signal de polarisation haute fréquence pendant l'état de TCP élevé, les caractéristiques d'isolation et les caractéristiques denses sont gravées de manière similaire.
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