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1. WO2020117496 - CURE METHODS FOR CROSS-LINKING SI-HYDROXYL BONDS

Publication Number WO/2020/117496
Publication Date 11.06.2020
International Application No. PCT/US2019/062833
International Filing Date 22.11.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
B05D 1/60
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
60Deposition of organic layers from vapour phase
B05D 3/067
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
3Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
06by exposure to radiation
061using U.V.
065After-treatment
067Curing or cross-linking the coating
C23C 16/56
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
56After-treatment
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • SEAMONS, Martin Jay
  • AHN, Byung Kook
  • LIANG, Jingmei
Agents
  • DOUGHERTY, Chad M.
  • VER STEEG, Steven H.
Priority Data
62/775,00804.12.2018US
62/796,89925.01.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CURE METHODS FOR CROSS-LINKING SI-HYDROXYL BONDS
(FR) PROCÉDÉS DE DURCISSEMENT POUR RÉTICULER DES LIAISONS SI-HYDROXYLE
Abstract
(EN)
Embodiments described herein provide a method of forming a silicon-and- oxygen-containing layer having covalent Si-O-Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and- oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.
(FR)
Des modes de réalisation de la présente invention concernent un procédé de formation d'une couche contenant du silicium et de l'oxygène ayant des liaisons Si-O-Si covalentes par réticulation de groupes silanol terminaux. Ledit procédé comprend l'étape consistant à positionner un substrat dans une chambre. Le substrat a une ou plusieurs tranchées comprenant une largeur inférieure ou égale à 10 nanomètres (nm), et un rapport d'aspect de 2 : 1 ou plus. Le rapport d'aspect est défini par un rapport d'une profondeur à la largeur de l'une ou plusieurs tranchées. Une couche contenant du silicium et de l'oxygène est disposée sur l'une ou plusieurs tranchées. La couche contenant du silicium et de l'oxygène possède des groupes silanol terminaux. Le substrat est chauffé, et la couche contenant du silicium et de l'oxygène est exposée à un précurseur contenant un groupe ammoniac ou amine distribué à travers un volume de traitement.
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