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1. WO2020117440 - COMPOSITION AND METHOD FOR SILICON NITRIDE CMP

Publication Number WO/2020/117440
Publication Date 11.06.2020
International Application No. PCT/US2019/061261
International Filing Date 13.11.2019
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
B24B 37/005 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/04 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
B24B 57/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
57Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
02for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/1409
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1409Abrasive particles per se
H01L 21/31055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
31055the removal being a chemical etching step, e.g. dry etching
Applicants
  • CABOT MICROELECTRONICS CORPORATION [US]/[US]
Inventors
  • HUNG LOW, Fernando
  • KRAFT, Steven
  • IVANOV, Roman A.
Agents
  • OMHOLT, Thomas
Priority Data
16/208,77904.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) COMPOSITION AND METHOD FOR SILICON NITRIDE CMP
(FR) COMPOSITION ET MÉTHODE POUR CMP DE NITRURE DE SILICIUM
Abstract
(EN)
The invention provides a chemical mechanical polishing composition for polishing a silicon nitride containing substrate. The composition includes an aqueous carrier; cationic silica particles dispersed in the aqueous carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition; a polishing additive selected from the group consisting of a polyether amine, a polysilamine, a polyvinylimidazole, and a combination thereof, wherein the polyether amine and the polysilamine have corresponding weight average molecular weights of about 1,000 g/mol or less. The composition has a pH of greater than about 6. A method for polishing a silicon nitride containing substrate is also provided.
(FR)
L'invention concerne une composition de polissage chimico-mécanique pour polir un substrat contenant du nitrure de silicium. La composition comprend un support aqueux ; des particules de silice cationique dispersées dans le support aqueux, les particules abrasives de silice cationique ayant un potentiel zêta d'au moins 10 mV dans la composition de polissage ; un additif de polissage choisi dans le groupe constitué par une amine de polyéther, une polysilamine, un polyvinylimidazole et une combinaison de ceux-ci, l'amine de polyéther et la polysilamine ayant des masses moléculaires moyennes en poids correspondantes d'environ 1 000 g/mol ou moins. La composition a un pH supérieur à environ 6. L'invention concerne également un procédé de polissage d'un substrat contenant du nitrure de silicium.
Also published as
Latest bibliographic data on file with the International Bureau