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1. WO2020117438 - COMPOSITION AND METHOD FOR COBALT CMP

Publication Number WO/2020/117438
Publication Date 11.06.2020
International Application No. PCT/US2019/061247
International Filing Date 13.11.2019
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
B24B 37/005 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/04 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
B24B 57/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
57Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
02for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • CABOT MICROELECTRONICS CORPORATION [US]/[US]
Inventors
  • HUNG LOW, Fernando
  • KRAFT, Steven
  • IVANOV, Roman A.
  • GRUMBINE, Steven
  • WOLFF, Andrew
Agents
  • OMHOLT, Thomas
Priority Data
16/208,70304.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) COMPOSITION AND METHOD FOR COBALT CMP
(FR) COMPOSITION ET PROCÉDÉ POUR LE POLISSAGE CHIMICO-MÉCANIQUE DU COBALT
Abstract
(EN)
A chemical mechanical polishing composition for polishing a substrate having a cobalt layer includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including a cobalt layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the cobalt layer from the substrate and thereby polish the substrate.
(FR)
Une composition de polissage chimico-mécanique pour polir un substrat ayant une couche de cobalt comprend un support liquide à base d'eau, des particules abrasives de silice cationique dispersées dans le support liquide, et un composé triazole, la composition de polissage ayant un pH supérieur à environ 6 et les particules abrasives de silice cationique ayant un potentiel zêta d'au moins 10 mV. Le composé triazole n'est pas le benzotriazole ni un composé benzotriazole. L'invention concerne également un procédé permettant le polissage chimico-mécanique d'un substrat incluant une couche de cobalt, comprenant la mise en contact du substrat avec la composition de polissage décrite ci-dessus, le déplacement de la composition de polissage par rapport au substrat et l'abrasion du substrat pour retirer du substrat une partie du cobalt et de cette manière polir le substrat.
Also published as
Latest bibliographic data on file with the International Bureau