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1. WO2020117337 - INTEGRATED ASSEMBLIES WHICH INCLUDE METAL-CONTAINING INTERCONNECTS TO ACTIVE-REGION PILLARS, AND METHODS OF FORMING INTEGRATED ASSEMBLIES

Publication Number WO/2020/117337
Publication Date 11.06.2020
International Application No. PCT/US2019/048621
International Filing Date 28.08.2019
IPC
H01L 23/528 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Layout of the interconnection structure
H01L 23/522 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
CPC
H01L 27/10805
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10805with one-transistor one-capacitor memory cells
H01L 27/10855
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
1085with at least one step of making the capacitor or connections thereto
10852the capacitor extending over the access transistor
10855with at least one step of making a connection between transistor and capacitor, e.g. plug
H01L 27/10885
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
10882with at least one step of making a data line
10885with at least one step of making a bit line
H01L 27/10888
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
10882with at least one step of making a data line
10888with at least one step of making a bit line contact
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • SIMSEK-EGE, Arzum F.
Agents
  • MATKIN, Mark S.
  • HENDRICKSEN, Mark, W.
  • LATWESEN, David, G.
  • SHAURETTE, James, D.
  • GRZELAK, Keith, D.
Priority Data
16/208,06503.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATED ASSEMBLIES WHICH INCLUDE METAL-CONTAINING INTERCONNECTS TO ACTIVE-REGION PILLARS, AND METHODS OF FORMING INTEGRATED ASSEMBLIES
(FR) ENSEMBLES INTÉGRÉS QUI COMPRENNENT DES INTERCONNEXIONS CONTENANT DU MÉTAL AVEC DES COLONNES À RÉGION ACTIVE, ET PROCÉDÉS DE FORMATION D'ENSEMBLES INTÉGRÉS
Abstract
(EN)
Some embodiments include an integrated assembly having active-region-pillars. Each of the active-region-pillars has contact regions. The contact regions include a pair of storage-element-contact-regions, and include a digit- line-contact-region between the storage-element-contact-regions. The active-region-pillars include silicon. Wordlines are along the active-region-pillars and extend along a first direction. Cobalt silicide is directly against the silicon of one or more of the contact regions. Metal-containing material is directly against the cobalt silicide. Digit-lines are electrically coupled with the digit-line-contact-regions and extend along a second direction which crosses the first direction. Storage-elements are electrically coupled with the storage-element-contact- regions. Some embodiments include methods of forming integrated assemblies.
(FR)
Certains modes de réalisation comprennent un ensemble intégré comportant des colonnes à région active. Chacune des colonnes à région active comporte des régions de contact. Les régions de contact comprennent une paire de régions de contact d'éléments de stockage, et comprennent une région de contact de ligne de bits entre les régions de contact d'éléments de stockage. Les colonnes à région active comprennent du silicium. Des lignes de mots se trouvent le long des colonnes à région active et s'étendent le long d'une première direction. Le siliciure de cobalt se trouve directement contre le silicium d'une ou plusieurs des régions de contact. Le matériau contenant du métal se trouve directement contre le siliciure de cobalt. Des lignes de bits sont couplées électriquement aux régions de contact de lignes de bits et s'étendent le long d'une seconde direction qui croise la première direction. Des éléments de stockage sont électriquement couplés aux régions de contact d'éléments de stockage. La présente invention se rapporte, dans certains modes de réalisation, à des procédés de formation d'ensembles intégrés.
Also published as
Latest bibliographic data on file with the International Bureau