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1. WO2020117325 - ETCHING COMPOSITIONS

Publication Number WO/2020/117325
Publication Date 11.06.2020
International Application No. PCT/US2019/042780
International Filing Date 22.07.2019
IPC
C09K 13/08 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
C09K 13/08
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
C09K 13/10
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
10containing a boron compound
H01L 21/30604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30604Chemical etching
Applicants
  • FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. [US]/[US]
Inventors
  • BJELOPAVLIC, Mick
  • BALLESTEROS, Carl
Agents
  • ZHANG, Tony
  • WEFERS, Marc M.
Priority Data
62/774,38203.12.2018US
62/811,60028.02.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ETCHING COMPOSITIONS
(FR) COMPOSITIONS DE GRAVURE
Abstract
(EN)
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
(FR)
La présente invention concerne des compositions de gravure qui sont utiles, par exemple, pour éliminer sélectivement du silicium-germainium (SiGe) d'un substrat semi-conducteur en tant qu'étape intermédiaire dans un procédé de fabrication de semi-conducteur en plusieurs étapes.
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