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1. WO2020117125 - METHOD FOR DETERMINING A PRESSURE AT A SAMPLE SURFACE

Publication Number WO/2020/117125
Publication Date 11.06.2020
International Application No. PCT/SE2019/051243
International Filing Date 06.12.2019
IPC
H01J 37/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron- or ion-diffraction tubes
285Emission microscopes, e.g. field-emission microscopes
G01N 23/227 2018.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/-G01N17/178
22by measuring secondary emission from the material
227Measuring photoelectric effect , e.g. photoelectron emission microscopy
CPC
G01N 23/227
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
22by measuring secondary emission from the material
227Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
H01J 2237/182
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
18Vacuum control means
182Obtaining or maintaining desired pressure
H01J 2237/188
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
18Vacuum control means
188Differential pressure
H01J 2237/2605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
2602Details
2605operating at elevated pressures, e.g. atmosphere
H01J 2237/2855
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
285Emission microscopes
2855Photo-emission
H01J 37/285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron or ion diffraction tubes
285Emission microscopes, e.g. field-emission microscopes
Applicants
  • SCIENTA OMICRON AB [SE]/[SE]
Inventors
  • AMANN, Peter
  • NILSSON, Anders
Agents
  • ZACCO SWEDEN AB
Priority Data
1851529-607.12.2018SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR DETERMINING A PRESSURE AT A SAMPLE SURFACE
(FR) PROCÉDÉ DE DÉTERMINATION D'UNE PRESSION AU NIVEAU D'UNE SURFACE D'ÉCHANTILLON
Abstract
(EN)
A method is described for monitoring a sample pressure at a sample surface (Ss) of a sample (1) placed in a sample region (2), which sample surface (Ss) is facing an aperture (3) in a wall (6) separating the sample region (2) from a low-pressure chamber (4) which is vacuum pumped. The method comprises the steps of determining a relationship between the sample reference pressures at the sample surface (Ss) and the chamber reference pressures in the low-pressure chamber (4), arranging (103) the sample (1) with the sample surface (Ss) facing the aperture (3) at a distance from the aperture (3), providing (104) a sample pressure, measuring (105) a chamber pressure inside the low pressure chamber (4), and determining (106) the sample pressure using the measured chamber pressure and the determined relationship between the sample reference pressures and the chamber reference pressures.
(FR)
L'invention concerne un procédé de surveillance d'une pression d'échantillon au niveau d'une surface d'échantillon (Ss) d'un échantillon (1) placé dans une région d'échantillon (2), ladite surface d'échantillon (Ss) faisant face à une ouverture (3) dans une paroi (6) séparant la zone d'échantillon (2) d'une chambre basse pression (4) qui est pompée sous vide. Le procédé comprend les étapes consistant à déterminer une relation entre les pressions de référence d'échantillon au niveau de la surface d'échantillon (Ss) et les pressions de référence de chambre dans la chambre basse pression (4), à agencer (103) l'échantillon (1) avec la surface d'échantillon (Ss) faisant face à l'ouverture (3) à une certaine distance de l'ouverture (3), fournir (104) une pression d'échantillon, mesurer (105) une pression de chambre à l'intérieur de la chambre basse pression (4), et à déterminer (106) la pression d'échantillon à l'aide de la pression de chambre mesurée et de la relation déterminée entre les pressions de référence d'échantillon et les pressions de référence de chambre.
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