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1. WO2020116978 - DISPLAY DEVICE USING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS, AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/116978
Publication Date 11.06.2020
International Application No. PCT/KR2019/017154
International Filing Date 06.12.2019
IPC
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/12 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
H01L 21/033 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033comprising inorganic layers
CPC
H01L 21/033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
033comprising inorganic layers
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/58
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
Applicants
  • 엘지전자 주식회사 LG ELECTRONICS INC. [KR]/[KR]
Inventors
  • 변양우 BYUN, Yangwoo
  • 송후영 SONG, Hooyoung
  • 이경호 LEE, Kyungho
Agents
  • 박장원 PARK, Jang-Won
Priority Data
62/776,46006.12.2018US
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY DEVICE USING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS, AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF D'AFFICHAGE UTILISANT DES ÉLÉMENTS ÉLECTROLUMINESCENTS À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
Abstract
(EN)
The present invention relates to a display device and a method for manufacturing same, specifically, to a display device using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size. The present invention provides a display device comprising a substrate having a wiring electrode, and a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, wherein the plurality of light-emitting elements consist of a buffer layer and a metal oxide layer formed on the buffer layer, and the metal oxide layer consists of an oxide of the buffer layer.
(FR)
La présente invention concerne un dispositif d'affichage et son procédé de fabrication, et plus particulièrement, un dispositif d'affichage utilisant des éléments électroluminescents à semi-conducteur de quelques micromètres à des dizaines de micromètres en taille. La présente invention concerne un dispositif d'affichage comprenant un substrat ayant une électrode de câblage, et une pluralité d'éléments électroluminescents à semi-conducteur connectés électriquement à l'électrode de câblage, la pluralité d'éléments électroluminescents étant constitués d'une couche tampon et d'une couche d'oxyde métallique formée sur la couche tampon, et la couche d'oxyde métallique étant constituée d'un oxyde de la couche tampon.
(KO)
본 발명은 디스플레이 장치 및 이의 제조방법에 관한 것으로 특히, 수㎛ 내지 수십㎛ 크기의 반도체 발광소자를 이용한 디스플레이 장치에 관한 것이다. 본 발명은 배선전극을 포함하는 기판 및 상기 배선전극과 전기적으로 연결되는 복수의 반도체 발광소자들을 포함하고, 상기 복수의 반도체 발광소자들은 버퍼층 및 상기 버퍼층 상에 형성되는 금속산화물층을 구비하고, 상기 금속산화물층은 상기 버퍼층의 산화물로 이루어지는 것을 특징으로 하는 디스플레이 장치를 제공한다.
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