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1. WO2020116718 - OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR

Publication Number WO/2020/116718
Publication Date 11.06.2020
International Application No. PCT/KR2019/003360
International Filing Date 22.03.2019
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 연세대학교 산학협력단 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY [KR]/[KR]
Inventors
  • 김현재 KIM, Hyun Jae
  • 강병하 KANG, Byung Ha
  • 김원기 KIM, Won Gi
Agents
  • 김연권 KIM, Youn Gwon
Priority Data
10-2018-015655607.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR
(FR) TRANSISTOR EN COUCHES MINCES À OXYDE SEMI-CONDUCTEUR
(KO) 산화물 반도체 박막 트랜지스터
Abstract
(EN)
The present invention relates to an oxide semiconductor thin film transistor including a multi-functional heterogeneous organic passivation layer, and according to one embodiment of the present invention, the oxide semiconductor thin film transistor comprises a gate electrode, a gate insulating layer, a channel layer, a source electrode, a drain electrode, a first passivation layer, and a second passivation layer, wherein the first passivation layer is formed by being vertically deposited on the channel layer, the source electrode, and the drain electrode, and is formed using an organic material having a band gap that prevents a carrier generated by external light from moving to the channel layer, and the second passivation layer is formed by being vertically deposited on the first passivation layer, and is formed using an organic material that exhibits hydrophobicity and prevents adsorption and desorption of external water molecules and oxygen.
(FR)
La présente invention concerne un transistor en couches minces à oxyde semi-conducteur, comprenant une couche de passivation organique hétérogène multifonctionnelle, et selon un mode de réalisation de la présente invention, le transistor en couches minces à oxyde semi-conducteur comprend une électrode grille, une couche d'isolation de grille, une couche de canal, une électrode source, une électrode drain, et une première et une seconde couche de passivation, la première couche de passivation étant formée en étant déposée verticalement sur la couche de canal, l'électrode source et l'électrode drain, et étant formée à l'aide d'un matériau organique comportant une bande interdite qui empêche un porteur de charge généré par la lumière externe de se déplacer vers la couche de canal, et la seconde couche de passivation étant formée en étant déposée verticalement sur la première couche de passivation, et étant formée à l'aide d'un matériau organique qui présente une hydrophobicité et empêche l'adsorption et la désorption de molécules d'eau externes et d'oxygène.
(KO)
본 발명은 다기능 이종접합 유기 패시베이션층(multi-functional heterogeneous organic passivation layer)을 포함하는 산화물 반도체 박막 트랜지스터에 관한 것으로서, 본 발명의 일실시예에 따르면 산화물 반도체 박막 트랜지스터는 게이트 전극, 게이트 절연층, 채널층, 소스 전극, 드레인 전극, 제1 패시베이션층 및 제2 패시베이션층을 포함하고, 상기 제1 패시베이션층은 상기 채널층, 상기 소스 전극 및 상기 드레인 전극 상에 수직 증착되어 형성되고, 외부의 빛에 의해 생성된 캐리어(carrier)가 상기 채널층으로 이동하는 것을 방지하는 밴드 갭(band gap)을 갖는 유기물질을 이용하여 형성되며, 상기 제2 패시베이션층은 상기 제1 패시베이션층 상에 수직 증착되어 형성되고, 소수성을 나타내며, 외부의 물분자 및 산소와의 흡착 및 탈착을 방지하는 유기물질을 이용하여 형성하는 기술에 관한 것이다.
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