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1. WO2020116618 - FILM FORMATION METHOD, FILM FORMATION DEVICE, SUSCEPTOR UNIT, AND SPACER SET USED IN SUSCEPTOR UNIT

Publication Number WO/2020/116618
Publication Date 11.06.2020
International Application No. PCT/JP2019/047840
International Filing Date 06.12.2019
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/458 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
52Controlling or regulating the coating process
CPC
C23C 16/458
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 株式会社ニューフレアテクノロジー NUFLARE TECHNOLOGY, INC. [JP]/[JP]
Inventors
  • 醍醐 佳明 DAIGO, Yoshiaki
Agents
  • 蔵田 昌俊 KURATA, Masatoshi
  • 野河 信久 NOGAWA, Nobuhisa
  • 井上 正 INOUE, Tadashi
  • 河野 直樹 KOHNO, Naoki
Priority Data
2018-22982507.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMATION METHOD, FILM FORMATION DEVICE, SUSCEPTOR UNIT, AND SPACER SET USED IN SUSCEPTOR UNIT
(FR) PROCÉDÉ ET DISPOSITIF DE FORMATION DE FILM, UNITÉ SUSCEPTEUR, ET ENSEMBLE ENTRETOISE UTILISÉ DANS UNE UNITÉ SUSCEPTEUR
(JA) 成膜方法、成膜装置、サセプタユニット、及びサセプタユニットに用いられるスペーサセット
Abstract
(EN)
This film formation method includes: the placement of a wafer on a susceptor unit that includes a support member for mounting the wafer, a side surface guide that is provided upon the support member and surrounds at least part of the outer circumference of the wafer, and a spacer for adjusting the position of the upper surface of the wafer and the upper surface of the side surface guide; the formation of a prescribed film on the upper surface of the mounted wafer and the formation of a film upon the side surface guide; the adjustment of the position of the upper surface of the side surface guide relative to the upper surface of the wafer, using the spacer and on the basis of the thickness of the prescribed film that has been formed; and the mounting of a new wafer on the position-adjusted susceptor unit and the formation of a new prescribed film.
(FR)
La présente invention porte sur un procédé de formation de film consistant : à placer une tranche sur une unité suscepteur dotée d'un élément de support servant au montage de la tranche, d'un guide de surface latérale qui est disposé sur l'élément de support et qui entoure au moins une partie de la circonférence externe de la tranche, et d'une entretoise servant à régler la position de la surface supérieure de la tranche et de la surface supérieure du guide de surface latérale ; à former un film prescrit sur la surface supérieure de la tranche montée et à former un film sur le guide de surface latérale ; à régler, à l'aide de l'entretoise et en fonction de l'épaisseur du film prescrit qui a été formé, la position de la surface supérieure du guide de surface latérale par rapport à la surface supérieure de la tranche ; et à monter une nouvelle tranche sur l'unité suscepteur à position réglée et à former un nouveau film prescrit.
(JA)
成膜方法は、ウェハを載置するための支持部材と、前記支持部材上に設けられ前記ウェハの外周の少なくとも一部を囲む側面ガイドと、前記ウェハの上面と前記側面ガイドの上面との位置を調整するためのスペーサと、を含むサセプタユニット上に前記ウェハを載置することと、載置された前記ウェハの上面に所定の膜を成膜するとともに前記側面ガイド上に膜を形成することと、 成膜された前記所定の膜の厚さに基づいて、前記スペーサを用いて前記ウェハの上面に対する前記側面ガイドの上面の位置を調整することと、前記位置が調整された前記サセプタユニット上に新たなウェハを載置して、新たな所定の膜を成膜すること、を含む。
Also published as
Latest bibliographic data on file with the International Bureau