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1. WO2020116545 - METAL FILM AND SPUTTERING TARGET

Publication Number WO/2020/116545
Publication Date 11.06.2020
International Application No. PCT/JP2019/047544
International Filing Date 05.12.2019
IPC
C23C 14/14 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
C22C 5/06 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
G02F 1/1335 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements
1335Structural association of cells with optical devices, e.g. polarisers or reflectors
G02F 1/1343 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements
1343Electrodes
C22F 1/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS OR NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
Applicants
  • 三菱マテリアル株式会社 MITSUBISHI MATERIALS CORPORATION [JP]/[JP]
Inventors
  • 歳森 悠人 TOSHIMORI Yuto
  • 野中 荘平 NONAKA Sohei
  • 小見山 昌三 KOMIYAMA Shozo
  • 林 雄二郎 HAYASHI Yujiro
Agents
  • 松沼 泰史 MATSUNUMA Yasushi
  • 寺本 光生 TERAMOTO Mitsuo
  • 細川 文広 HOSOKAWA Fumihiro
  • 大浪 一徳 ONAMI Kazunori
Priority Data
2018-22836605.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METAL FILM AND SPUTTERING TARGET
(FR) FILM MÉTALLIQUE ET CIBLE DE PULVÉRISATION
(JA) 金属膜、及び、スパッタリングターゲット
Abstract
(EN)
The present invention contains 0.05 to 5.00 at% of In, and the Pd content is 40 ppm by mass or less, the Pt content is 20 ppm by mass or less, the Au content is 20 ppm by mass or less, the Rh content is 10 ppm by mass or less, and the combined content of Pd, Pt, Au and Rh is 50 ppm or less by mass, the balance being Ag and inevitable impurities.
(FR)
La présente invention contient de 0,05 à 5,00 % d'In, et la teneur en Pd est de 40 ppm en masse ou moins, la teneur en Pt est de 20 ppm en masse ou moins, la teneur en Au est de 20 ppm en masse ou moins, la teneur en Rh est de 10 ppm en masse ou moins, et la teneur combinée de Pd, Pt, Au et Rh est inférieure ou égale à 50 ppm en masse, le reste étant de l'Ag et des impuretés inévitables.
(JA)
Inを0.05原子%以上5.00原子%以下の範囲で含有するとともに、Pdの含有量が40質量ppm以下、Ptの含有量が20質量ppm以下、Auの含有量が20質量ppm以下、Rhの含有量が10質量ppm以下、かつ、PdとPtとAuとRhの合計含有量が50質量ppm以下とされており、残部がAgと不可避不純物からなる。
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