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1. WO2020116288 - COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION AND METHOD FOR PRODUCING SEMICONDUCTOR CHIP

Publication Number WO/2020/116288
Publication Date 11.06.2020
International Application No. PCT/JP2019/046430
International Filing Date 27.11.2019
IPC
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
B23K 26/00 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
CPC
B23K 26/00
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
Applicants
  • リンテック株式会社 LINTEC CORPORATION [JP]/[JP]
Inventors
  • 古野 健太 FURUNO Kenta
Agents
  • 西澤 和純 NISHIZAWA Kazuyoshi
  • 五十嵐 光永 IGARASHI Koei
  • 加藤 広之 KATO Hiroyuki
Priority Data
2018-22852905.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION AND METHOD FOR PRODUCING SEMICONDUCTOR CHIP
(FR) FEUILLE COMPOSITE POUR FORMATION DE FILM DE PROTECTION ET PROCÉDÉ DE PRODUCTION DE PUCE SEMI-CONDUCTRICE
(JA) 保護膜形成用複合シート、及び半導体チップの製造方法
Abstract
(EN)
A composite sheet (101) for protective film formation, which is provided with: a supporting sheet (10); and a film (13) for protective film formation, which is formed on one surface of the supporting sheet. This composite sheet (101) for protective film formation is configured such that: the supporting sheet (10) is provided with a base material (11) and an antistatic layer (17) which is formed on one surface or both surfaces of the base material; the supporting sheet (10) of the composite sheet (101) for protective film formation has a total light transmittance of 85% or more or a haze of 43% or less; and the surface resistivity of the composite sheet (101) for protective film formation is 1.0 × 1011 Ω/□ or less.
(FR)
L'invention concerne une feuille composite (101) pour la formation de film de protection, qui comporte : une feuille de support (10) ; et un film (13) pour la formation de film de protection, qui est formé sur une surface de la feuille de support. Cette feuille composite (101) pour formation de film de protection est configurée de telle sorte que : la feuille de support (10) comporte un matériau de base (11) et une couche antistatique (17) qui est formée sur une surface ou les deux surfaces du matériau de base ; la feuille de support (10) de la feuille composite (101) pour la formation de film de protection a une transmittance de lumière totale de 85 % ou plus ou un trouble de 43 % ou moins ; et la résistivité de surface de la feuille composite (101) pour la formation de film de protection est inférieure ou égale à 1,0 × 1011 Ω/□.
(JA)
支持シート(10)と、前記支持シートの一方の面上に形成された保護膜形成用フィルム(13)と、を備えた、保護膜形成用複合シート(101)であって、前記支持シート(10)は、基材(11)と、前記基材の片面又は両面上に形成された帯電防止層(17)と、を備え、保護膜形成用複合シート(101)の、前記支持シート(10)の全光線透過率を85%以上とするか、ヘーズを43%以下とし、前記保護膜形成用複合シート(101)の表面抵抗率を1.0×1011Ω/□以下とする。
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