Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020116275 - PROTECTIVE FILM-FORMING COMPOSITE SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP

Publication Number WO/2020/116275
Publication Date 11.06.2020
International Application No. PCT/JP2019/046354
International Filing Date 27.11.2019
IPC
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
CPC
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
Applicants
  • リンテック株式会社 LINTEC CORPORATION [JP]/[JP]
Inventors
  • 山本 大輔 YAMAMOTO Daisuke
Agents
  • 西澤 和純 NISHIZAWA Kazuyoshi
  • 五十嵐 光永 IGARASHI Koei
  • 加藤 広之 KATO Hiroyuki
Priority Data
2018-22852405.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROTECTIVE FILM-FORMING COMPOSITE SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
(FR) FEUILLE COMPOSITE FORMANT UN FILM DE PROTECTION ET PROCÉDÉ DE FABRICATION DE PUCE SEMI-CONDUCTRICE
(JA) 保護膜形成用複合シート、及び半導体チップの製造方法
Abstract
(EN)
The present invention relates to a protective film-forming composite sheet comprising: a support sheet; and a protective film-forming film, formed on one surface of the support sheet. The surface resistivity of the outermost layer on the support sheet side of the protective film-forming composite sheet, after expanding the protective film-forming film in a surface direction under conditions where the push-up speed is 10 mm/sec and the push-up height is 20 mm, and in an environment having a temperature of 23°C, is 1.0×1011 Ω/□ or less.
(FR)
La présente invention concerne une feuille composite formant un film de protection comprenant : une feuille de support ; et un film formant un film de protection, formé sur une surface de la feuille de support. La résistivité en surface de la couche la plus à l'extérieur du côté feuille de support de la feuille composite formant un film de protection, après expansion du film formant un film de protection dans une direction de surface dans des conditions où la vitesse de poussée est de 10 mm/sec et la hauteur de poussée est de 20 mm, et dans un environnement ayant une température de 23 °C, est inférieure ou égale à 1,0 × 1011 Ω/□.
(JA)
本発明は、支持シートと、前記支持シートの一方の面上に形成された保護膜形成用フィルムとを備えた保護膜形成用複合シートに関し、温度23℃の環境下において、突き上げ速度10mm/sec、突き上げ高さ20mmの条件で、前記保護膜形成用フィルムを表面方向にエキスパンドした後の、前記保護膜形成用複合シートの前記支持シート側の最表層の表面抵抗率が、1.0×1011Ω/□以下である。
Latest bibliographic data on file with the International Bureau