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1. WO2020116270 - P-TYPE IMPURITY DIFFUSION COMPOSITION AND PRODUCTION METHOD THEREOF, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT USING SAID DIFFUSION COMPOSITION, AND SOLAR BATTERY

Publication Number WO/2020/116270
Publication Date 11.06.2020
International Application No. PCT/JP2019/046319
International Filing Date 27.11.2019
IPC
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/077 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
077the devices comprising monocrystalline or polycrystalline materials
H01L 21/225 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
CPC
H01L 21/225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
H01L 31/077
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type
077the devices comprising monocrystalline or polycrystalline materials
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • 東レ株式会社 TORAY INDUSTRIES, INC. [JP]/[JP]
Inventors
  • 北田剛 KITADA, Tsuyoshi
  • 橘邦彦 TACHIBANA, Kunihiko
  • 秋本旭 AKIMOTO, Akira
Priority Data
2018-22958207.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) P-TYPE IMPURITY DIFFUSION COMPOSITION AND PRODUCTION METHOD THEREOF, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT USING SAID DIFFUSION COMPOSITION, AND SOLAR BATTERY
(FR) COMPOSITION POUR DIFFUSION D'IMPURETÉS DU TYPE P ET SON PROCÉDÉ DE PRODUCTION, PROCÉDÉ DE FABRICATION D'ÉLÉMENT À SEMI-CONDUCTEUR UTILISANT LADITE COMPOSITION POUR DIFFUSION, ET BATTERIE SOLAIRE
(JA) p型不純物拡散組成物とその製造方法、それを用いた半導体素子の製造方法および太陽電池
Abstract
(EN)
The purpose of the present invention is to provide a p-type impurity diffusion composition which makes possible uniform dispersion on a semiconductor substrate and increasing the storage stability of a coating liquid. This p-type impurity diffusion composition contains (a) at least one resin selected from polyvinyl alcohol and polyethylene oxide, (b) a solvent, and (c) a compound containing a group 13 element, and is characterized in that the pH of the composition is 4-6.5, the solvent (b) contains (b-1) an organic solvent with a boiling point of 110-210°C and (b-2) water, and the amount of water (b-2) is 10-50 mass% of the (b) solvent.
(FR)
Le but de la présente invention est de pourvoir à une composition pour diffusion d'impuretés du type p qui permette de réaliser une dispersion uniforme sur un substrat semi-conducteur et d'augmenter la stabilité au stockage d'un liquide de revêtement. Cette composition pour diffusion d'impuretés du type p contient (a) au moins une résine choisie parmi le poly(alcool vinylique) et le poly(oxyde d'éthylène), (b) un solvant, et (c) un composé contenant un élément du groupe 13, et est caractérisée en ce que le pH de la composition est de 4 à 6,5, le solvant (b) contient (b-1) un solvant organique ayant un point d'ébullition de 110 à 210 °C et (b-2) de l'eau, et la quantité d'eau (b-2) est de 10 à 50 % en masse du solvant (b).
(JA)
半導体基板への均一な拡散と塗布液の保存安定性の向上を可能とするp型不純物拡散組成物を提供することを課題とする。 (a)ポリビニルアルコールおよびポリエチレンオキサイドから選ばれる少なくとも1つの樹脂、 (b)溶媒、および (c)第13族元素を含む化合物 を含むp型不純物拡散組成物であって、組成物のpHが4~6.5であり、(b)溶媒が、(b-1)沸点110℃以上、210℃以下の有機溶媒と(b-2)水とを含み、(b-2)水の量が(b)溶媒中の10~50質量%であることを特徴とするp型不純物拡散組成物。
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