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1. WO2020116263 - SEMICONDUCTOR DEVICE AND AUTOMOTIVE ELECTRONIC CONTROL DEVICE USING SAME

Publication Number WO/2020/116263
Publication Date 11.06.2020
International Application No. PCT/JP2019/046273
International Filing Date 27.11.2019
IPC
H01L 21/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
Applicants
  • 日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP]/[JP]
Inventors
  • 池ヶ谷 克己 IKEGAYA Katsumi
  • 大島 隆文 OSHIMA Takayuki
  • 小林 洋一郎 KOBAYASHI Yoichiro
  • 北 雅人 KITA Masato
  • 小森山 恵士 KOMORIYAMA Keishi
  • 右田 稔 MIGITA Minoru
  • 川越 悠 KAWAGOE Yu
  • 菅野 清隆 KANNO Kiyotaka
Agents
  • 戸田 裕二 TODA Yuji
Priority Data
2018-22740804.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND AUTOMOTIVE ELECTRONIC CONTROL DEVICE USING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF DE COMMANDE ÉLECTRONIQUE AUTOMOBILE L'UTILISANT
(JA) 半導体装置およびそれを用いた車載用電子制御装置
Abstract
(EN)
Provided is a highly-reliable semiconductor device provided with a current mirror circuit, said semiconductor device being capable of suppressing fluctuations over time in the mirror ratio of the current mirror circuit. The semiconductor device is characterized by comprising a current mirror circuit having a first MOS transistor and a plurality of MOS transistors that form a pair with the first MOS transistor, and a plurality of wiring layers formed on the upper layer of the MOS transistors, wherein the plurality of wiring layers is positioned so that each wiring pattern has the same form within a prescribed range from a channel region end section of each MOS transistor of the plurality of MOS transistors and the first MOS transistor.
(FR)
L'invention concerne un dispositif à semi-conducteur hautement fiable comprenant un circuit de miroir de courant, ledit dispositif à semi-conducteur étant apte à supprimer des fluctuations dans le temps dans le rapport de miroir du circuit de miroir de courant. Le dispositif à semi-conducteur est caractérisé en ce qu'il comprend un circuit miroir de courant ayant un premier transistor MOS et une pluralité de transistors MOS qui forment une paire avec le premier transistor MOS, et une pluralité de couches de câblage formées sur la couche supérieure des transistors MOS, la pluralité de couches de câblage étant positionnée de telle sorte que chaque motif de câblage a la même forme dans une plage prescrite à partir d'une section d'extrémité de région de canal de chaque transistor MOS de la pluralité de transistors MOS et du premier transistor MOS.
(JA)
カレントミラー回路を備える半導体装置において、カレントミラー回路のミラー比の経時変化を抑制可能な信頼性の高い半導体装置を提供する。 第1MOSトランジスタと前記第1MOSトランジスタと対をなす複数のMOSトランジスタを有するカレントミラー回路と、前記MOSトランジスタの上層に形成される複数の配線層と、を備え、前記複数の配線層は、前記第1MOSトランジスタおよび前記複数のMOSトランジスタの各MOSトランジスタのチャネル領域端部から所定の範囲内において、各配線パターンが同一形状となるように配置されていることを特徴とする。
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