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1. WO2020116259 - PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

Publication Number WO/2020/116259
Publication Date 11.06.2020
International Application No. PCT/JP2019/046238
International Filing Date 26.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
Inventors
  • 平山 昌樹 HIRAYAMA Masaki
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柏岡 潤二 KASHIOKA Junji
Priority Data
2018-22924406.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置及びプラズマ処理方法
Abstract
(EN)
The plasma processing device according to one exemplified embodiment is provided with a processing container, a stage, a top electrode, and an introduction unit. The stage is provided within the processing container. The top electrode is provided above the stage through the space in the processing container. The introduction unit introduces a high-frequency wave that is a VHF wave and is provided at a lateral direction end in the space in the processing container. The stage includes a body and a conductive layer. The body is formed of an insulating body. The conductive layer is provided within the body. The conductive layer has the shortest distance from the upper surface of the stage among one or more conductive layers provided within the stage. The conductive layer is formed annularly.
(FR)
Selon un mode de réalisation, le dispositif de traitement par plasma de l'invention est équipé d'un réceptacle de traitement, d'une platine, d'une électrode de partie supérieure et d'une partie induction. La platine est agencée à l'intérieur du réceptacle de traitement. L'électrode de partie supérieure est agencée au-dessus de la platine avec un espace à l'intérieur du réceptacle de traitement pour intermédiaire. La partie induction est une partie induction d'ondes haute fréquence consistant en des ondes très haute fréquence, et est agencée dans une partie extrémité de direction latérale de l'espace à l'intérieur du réceptacle de traitement. La platine contient un corps principal et des couches conductrices. Le corps principal est formé à partir d'un corps isolant. Les couches conductrices sont agencées à l'intérieur du corps principal. Les couches conductrices présentent la distance la plus courte à partir de la face supérieure de la platine, parmi la couche conductrice ou les couches conductrices agencées à l'intérieur de la platine. Les couches conductrices prennent une forme circulaire.
(JA)
一つの例示的実施形態に係るプラズマ処理装置は、処理容器、ステージ、上部電極、及び導入部を備える。ステージは、処理容器内に設けられている。上部電極は、ステージの上方に処理容器内の空間を介して設けられている。導入部は、VHF波である高周波の導入部であり、処理容器内の空間の横方向端部に設けられている。ステージは、本体及び導電層を含む。本体は、絶縁体から形成されている。導電層は、本体内に設けられている。導電層は、ステージ内に設けられた一つ以上の導電層のうちステージの上面から最短の距離を有する。導電層は、環状に形成されている。
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