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1. WO2020116250 - PLASMA PROCESSING APPARATUS

Publication Number WO/2020/116250
Publication Date 11.06.2020
International Application No. PCT/JP2019/046223
International Filing Date 26.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
C23C 16/509 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 池田 太郎 IKEDA Taro
  • 北原 聡文 KITAHARA Toshifumi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柏岡 潤二 KASHIOKA Junji
Priority Data
2018-22926206.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract
(EN)
The present invention provides a plasma processing apparatus which is capable of suppressing the occurrence of an abnormal discharge. A plasma processing apparatus according to the present invention is provided with an upper electrode and a lower electrode, which are arranged within a processing container so as to face each other, and a dielectric shower for gas introduction, which is arranged below the upper electrode; and this plasma processing apparatus generates a plasma in the space between the upper electrode and the lower electrode. This plasma processing apparatus is configured such that the upper electrode is provided with: a slot for introducing VHF waves into the processing container; and a gas flow path which is provided independently from the slot, while being in communication with the dielectric shower.
(FR)
La présente invention concerne un appareil de traitement au plasma qui est capable de supprimer l'apparition d'une décharge anormale. Un appareil de traitement au plasma selon la présente invention est pourvu d'une électrode supérieure et d'une électrode inférieure, agencées à l'intérieur d'un récipient de traitement de façon à se faire face l'une à l'autre, et une douche diélectrique pour l'introduction de gaz, disposée au-dessous de l'électrode supérieure. L'appareil de traitement au plasma génère un plasma dans l'espace entre l'électrode supérieure et l'électrode inférieure. Cet appareil de traitement au plasma est configuré de telle sorte que l'électrode supérieure comporte une fente pour introduire des ondes à très hautes fréquences dans le récipient de traitement ; et un trajet d'écoulement de gaz est disposé indépendamment de la fente, tout en étant en communication avec la douche diélectrique.
(JA)
異常放電を抑制可能なプラズマ処理装置を提供する。処理容器内に対向配置された上部電極及び下部電極と、上部電極の下方に配置されたガス導入用の誘電体シャワーとを備え、上部電極と下部電極との間の空間にプラズマを発生させるプラズマ処理装置において、上部電極は、処理容器内へのVHF波導入用のスロットと、スロットから独立して設けられ、誘電体シャワーに連通したガス流路とを備えている。
Also published as
Latest bibliographic data on file with the International Bureau