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1. WO2020116246 - SHOWER PLATE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Publication Number WO/2020/116246
Publication Date 11.06.2020
International Application No. PCT/JP2019/046214
International Filing Date 26.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
Inventors
  • 池田 太郎 IKEDA Taro
  • 川上 聡 KAWAKAMI Satoru
  • 平山 昌樹 HIRAYAMA Masaki
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柏岡 潤二 KASHIOKA Junji
Priority Data
2018-22922306.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SHOWER PLATE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
(FR) PLAQUE DE DOUCHE, APPAREIL DE TRAITEMENT PAR PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) シャワープレート、プラズマ処理装置及びプラズマ処理方法
Abstract
(EN)
Improvement of the in-plane uniformity of plasma on a stage has been required with respect to a shower plate, a plasma processing apparatus and a plasma processing method. A shower plate according to one exemplary embodiment of the present invention is provided with: an upper dielectric body which is arranged so as to face a stage; and an upper electrode which is buried in the upper dielectric body. The distance between the lower surface of the upper dielectric body and the upper electrode is shorter in the peripheral part than in the central part.
(FR)
Le problème décrit par la présente invention est d'améliorer l'uniformité dans le plan du plasma sur un plateau dans une plaque de douche, un appareil de traitement par plasma et un procédé de traitement par plasma. Selon un mode de réalisation donné à titre d'exemple de la présente invention, une plaque de douche comprend : un corps diélectrique supérieur qui est agencé de façon à faire face à un plateau ; et une électrode supérieure qui est enfouie dans le corps diélectrique supérieur. La distance entre la surface inférieure du corps diélectrique supérieur et l'électrode supérieure est plus courte dans la partie périphérique que dans la partie centrale
(JA)
シャワープレート、プラズマ処理装置及びプラズマ処理方法においては、ステージ上のプラズマの面内均一性の向上が求められている。一つの例示的実施形態に係るシャワープレートは、ステージに対向して配置された上部誘電体と、上部誘電体内に埋め込まれた上部電極とを備えている。上部誘電体の下面と上部電極との間の距離は、中央部よりも周辺部の方が小さい。
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