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1. WO2020116245 - PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Publication Number WO/2020/116245
Publication Date 11.06.2020
International Application No. PCT/JP2019/046211
International Filing Date 26.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
Inventors
  • 池田 太郎 IKEDA Taro
  • 川上 聡 KAWAKAMI Satoru
  • 平山 昌樹 HIRAYAMA Masaki
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柏岡 潤二 KASHIOKA Junji
Priority Data
2018-22922206.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
(FR) APPAREIL DE TRAITEMENT PAR PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置及びプラズマ処理方法
Abstract
(EN)
Improvement of the in-plane uniformity of plasma on a stage has been required with respect to a plasma processing apparatus and a plasma processing method. A plasma processing apparatus according to the present invention is provided with a processing container, a stage and a dielectric plate. The stage is provided within the processing container; the dielectric plate has a plurality of through holes for gas jetting; and the upper surface of the dielectric plate is provided with a conductive film. The space between the conductive film and the stage within the processing container serves as a plasma processing space. The dielectric plate has a central part and an outer peripheral part; the upper surfaces of the central part and the outer peripheral part have flat parts; and the thickness of the central part is larger than the thickness of the outer peripheral part.
(FR)
Le problème décrit par la présente invention est d'améliorer l'uniformité dans le plan du plasma sur un plateau dans un appareil de traitement par plasma et un procédé de traitement par plasma. La solution selon l'invention porte sur un appareil de traitement par plasma comprenant un récipient de traitement, un plateau et une plaque diélectrique. Le plateau est placé à l'intérieur du récipient de traitement ; la plaque diélectrique comporte une pluralité d'orifices traversants pour le jet de gaz ; et la surface supérieure de la plaque diélectrique est dotée d'un film conducteur. L'espace entre le film conducteur et le plateau à l'intérieur du récipient de traitement sert d'espace de traitement par plasma. La plaque diélectrique a une partie centrale et une partie périphérique externe ; les surfaces supérieures de la partie centrale et de la partie périphérique externe ont des parties plates ; et l'épaisseur de la partie centrale est supérieure à l'épaisseur de la partie périphérique externe.
(JA)
プラズマ処理装置及びプラズマ処理方法においては、ステージ上のプラズマの面内均一性の向上が求められている。プラズマ処理装置は、処理容器とステージと誘電体板とを備えている。ステージは、処理容器内に設けられ、誘電体板は、複数のガス噴出用の貫通孔を有し、誘電体板の上面には導電膜が設けられている。導電膜とステージとの間の処理容器内の空間をプラズマ処理空間とする。誘電体板は、中央部及び外周部を備え、中央部及び外周部の上面は平坦部を備え、中央部の厚さは外周部の厚さよりも大きい。
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