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1. WO2020116243 - PLASMA PROCESSING APPARATUS

Publication Number WO/2020/116243
Publication Date 11.06.2020
International Application No. PCT/JP2019/046208
International Filing Date 26.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 池田 太郎 IKEDA Taro
  • 北原 聡文 KITAHARA Toshifumi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柏岡 潤二 KASHIOKA Junji
Priority Data
2018-22922106.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract
(EN)
Improvement of plasma heat dissipation has been required with respect to a plasma processing apparatus. A plasma processing apparatus according to the present invention is provided with a dielectric body, a conductive film, a heat radiation film and an electrode. The dielectric body has one surface which faces a space for plasma generation. The conductive film is provided on the other surface of the dielectric body. The heat radiation film is provided on the conductive film, and has a higher emissivity than the conductive film. The electrode is electrically connected to the conductive film, and is used for the application of electric power for plasma generation.
(FR)
L'amélioration de la dissipation thermique du plasma est requise par rapport à un appareil de traitement au plasma. Un appareil de traitement au plasma selon la présente invention est pourvu d'un corps diélectrique, d'un film conducteur, d'un film de rayonnement thermique et d'une électrode. Le corps diélectrique a une surface qui fait face à un espace pour la génération de plasma. Le film conducteur est disposé sur l'autre surface du corps diélectrique. Le film de rayonnement thermique est disposé sur le film conducteur et présente une émissivité supérieure à celle du film conducteur. L'électrode est électriquement connectée au film conducteur et est utilisée pour l'application d'énergie électrique pour la génération de plasma.
(JA)
プラズマ処理装置においては、プラズマ熱の放出の向上が求められている。プラズマ処理装置は、誘電体、導電膜、熱放射膜、電極を備えている。誘電体は、プラズマ発生用の空間に面する一方面を有する。導電膜は、誘電体の他方面上に設けられている。熱放射膜は、導電膜上に設けられ、導電膜よりも高い放射率を有する。電極は、導電膜に電気的に接続されており、これはプラズマ発生用の電力を与えるためのものである。
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