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1. WO2020116198 - ORGANOSILICON COMPOUND, METHOD FOR PRODUCING ORGANOSILICON COMPOUND, THERMOSETTING RESIN COMPOSITION, MOLDED BODY, AND OPTICAL SEMICONDUCTOR DEVICE

Publication Number WO/2020/116198
Publication Date 11.06.2020
International Application No. PCT/JP2019/045754
International Filing Date 22.11.2019
IPC
C08G 77/20 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
04Polysiloxanes
20containing silicon bound to unsaturated aliphatic groups
C08G 77/12 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
04Polysiloxanes
12containing silicon bound to hydrogen
C08L 83/05 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
05containing silicon bound to hydrogen
C08L 83/07 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
07containing silicon bound to unsaturated aliphatic groups
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
CPC
C08G 77/12
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
12containing silicon bound to hydrogen
C08G 77/20
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
20containing silicon bound to unsaturated aliphatic groups
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H01L 23/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
H01L 33/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
56Materials, e.g. epoxy or silicone resin
Applicants
  • JNC株式会社 JNC CORPORATION [JP]/[JP]
Inventors
  • 西澤 啓介 NISHIZAWA Keisuke
  • 池野 浩章 IKENO Hironori
  • 木谷 綾花 KIYA Ayaka
  • 市川 幸治 ICHIKAWA Koji
  • 石川 健太郎 ISHIKAWA Kentaro
  • 川畑 毅一 KAWABATA Kiichi
Priority Data
2018-22762904.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ORGANOSILICON COMPOUND, METHOD FOR PRODUCING ORGANOSILICON COMPOUND, THERMOSETTING RESIN COMPOSITION, MOLDED BODY, AND OPTICAL SEMICONDUCTOR DEVICE
(FR) COMPOSÉ D'ORGANOSILICIUM, PROCÉDÉ DE PRODUCTION D'UN COMPOSÉ D'ORGANOSILICIUM, COMPOSITION DE RÉSINE THERMODURCISSABLE, CORPS MOULÉ ET DISPOSITIF OPTIQUE SEMICONDUCTEUR
(JA) 有機ケイ素化合物、有機ケイ素化合物の製造方法、熱硬化性樹脂組成物、成形体、及び光半導体装置
Abstract
(EN)
Provided are: an organosilicon compound and a thermosetting resin composition from which a molded body in which cracks are unlikely to occur even in a high-temperature environment can be obtained; and a molded body and an optical semiconductor device which are obtained by using the thermosetting resin composition. The present invention relates to an organosilicon compound containing a structural unit (i) represented by formula (i) and a structural unit (ii) represented by formula (ii), and having a vinyl group or a hydrosilyl group at the both ends of a molecular chain, wherein the organosilicon compound has a weight average molecular weight of 1,000-20,000, the polymerization degree of the structural unit (i) is 1-5, and the polymerization degree of the structural unit (ii) is 4-200. In formula (i), R1's are each independently a hydrocarbon group having 1 to 8 carbon atoms. In formula (ii), R2's are each independently a hydrocarbon group having 1 to 8 carbon atoms.
(FR)
L'invention concerne : un composé d'organosilicium et une composition de résine thermodurcissable à partir de laquelle peut être obtenu un corps moulé dans lequel des fissures sont peu susceptibles de se produire même dans un environnement à haute température ; et un corps moulé et un dispositif optique semiconducteur qui sont obtenus à l'aide de la composition de résine thermodurcissable. Le composé d'organosilicium selon la présente invention contient une unité structurale (i) représentée par la formule (i) et une unité structurale (ii) représentée par la formule (ii), et ayant un groupe vinyle ou un groupe hydrosilyle aux deux extrémités d'une chaîne moléculaire, le composé d'organosilicium ayant un poids moléculaire moyen en poids de 1 000 à 20 000, le degré de polymérisation de l'unité structurale (i) étant de 1 à 5, et le degré de polymérisation de l'unité structurale (ii) étant de 4 à 200. Dans la formule (i), les R1 sont chacun indépendamment un groupe hydrocarboné ayant 1 à 8 atomes de carbone. Dans la formule (ii), les R2 sont chacun indépendamment un groupe hydrocarboné ayant 1 à 8 atomes de carbone.
(JA)
高温環境下でもクラックが生じ難い成形体を得ることができる有機ケイ素化合物及び熱硬化性樹脂組成物、並びにこのような熱硬化性樹脂組成物を用いて得られる成形体及び光半導体装置を提供する。 本発明は、下記式(i)で表される構造単位(i)、及び下記式(ii)で表される構造単位(ii)を含み、分子鎖の両末端にそれぞれビニル基又はヒドロシリル基が存在する有機ケイ素化合物であって、重量平均分子量が1,000以上20,000以下、上記構造単位(i)の重合度が1以上5以下、上記構造単位(ii)の重合度が4以上200以下である有機ケイ素化合物である。式(i)中、Rは、それぞれ独立して、炭素数1~8の炭化水素基である。式(ii)中、Rは、それぞれ独立して、炭素数1~8の炭化水素基である。
Also published as
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