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1. WO2020116169 - ANNEALING DEVICE AND ANNEALING METHOD

Publication Number WO/2020/116169
Publication Date 11.06.2020
International Application No. PCT/JP2019/045461
International Filing Date 20.11.2019
IPC
H01L 21/265 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
H01L 21/268 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
CPC
H01L 21/265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
H01L 21/268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
Applicants
  • 住友重機械工業株式会社 SUMITOMO HEAVY INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 田中 哲平 TANAKA, Teppei
Agents
  • 来山 幹雄 KITAYAMA, Mikio
Priority Data
2018-22643503.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ANNEALING DEVICE AND ANNEALING METHOD
(FR) DISPOSITIF DE RECUIT ET PROCÉDÉ DE RECUIT
(JA) アニール装置及びアニール方法
Abstract
(EN)
In the present invention, a heating unit heats the surface of an annealing object and temporarily melts a surface layer section thereof. A sensor detects thermal emission light from the annealing object that was heated by the heating unit. A processing unit estimates the results of annealing the annealing object, on the basis of a waveform showing the temporal changes in the strength of the thermal emission light detected by the sensor.
(FR)
Dans la présente invention, une unité de chauffage chauffe la surface d'un objet de recuit et fait fondre temporairement une section de couche de surface de celui-ci. Un capteur détecte la lumière d'émission thermique provenant de l'objet de recuit qui a été chauffé par l'unité de chauffage. Une unité de traitement estime les résultats de recuit de l'objet de recuit, sur la base d'une forme d'onde montrant les changements temporels dans l'intensité de la lumière d'émission thermique détectée par le capteur.
(JA)
加熱部が、アニール対象物の表面を加熱して表層部を一時的に溶融させる。加熱部によって加熱されたアニール対象物からの熱放射光がセンサによって検出される。処理部が、センサによって検出された熱放射光の強度の時間変化を示す波形に基づいて、アニール対象物のアニール結果を推定する。
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