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1. WO2020116153 - SEMICONDUCTOR OPTICAL ELECTRODE

Publication Number WO/2020/116153
Publication Date 11.06.2020
International Application No. PCT/JP2019/045341
International Filing Date 20.11.2019
IPC
B01J 35/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
35Catalysts, in general, characterised by their form or physical properties
02Solids
C25B 5/00 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
5Electrogenerative processes, i.e. processes for producing compounds in which simultaneously electricity is generated
C25B 1/04 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
1Electrolytic production of inorganic compounds or non-metals
02of hydrogen or oxygen
04by electrolysis of water
C25B 11/04 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
C25B 11/06 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
06by the catalytic materials used
B01J 23/755 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
23Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/113
70of the iron group metals or copper
74Iron group metals
755Nickel
CPC
B01J 23/755
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
23Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
70of the iron group metals or copper
74Iron group metals
755Nickel
B01J 35/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
35Catalysts, in general, characterised by their form or physical properties
02Solids
C25B 1/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
1Electrolytic production of inorganic compounds or non-metals
02of hydrogen or oxygen
04by electrolysis of water
C25B 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
C25B 5/00
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
5Electrogenerative processes, i.e. processes for producing compounds in which simultaneously electricity is generated
Applicants
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
Inventors
  • 渦巻 裕也 UZUMAKI Yuya
  • 里 紗弓 SATO Sayumi
  • 小野 陽子 ONO Yoko
  • 小松 武志 KOMATSU Takeshi
Agents
  • 三好 秀和 MIYOSHI Hidekazu
  • 工藤 理恵 KUDO Rie
Priority Data
2018-22707604.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR OPTICAL ELECTRODE
(FR) ÉLECTRODE OPTIQUE À SEMI-CONDUCTEUR
(JA) 半導体光電極
Abstract
(EN)
Provided is a semiconductor optical electrode which maintains light energy conversion efficiency for a long period of time. In the semiconductor optical electrode, a conductive substrate 11 composed of a group III-V compound semiconductor is used, a semiconductor thin film 12 composed of a group III-V compound semiconductor having a photocatalyst function is disposed on the substrate 11, and an oxygen generation promotion catalyst layer 13 having an oxygen generation promotion catalyst function with respect to the semiconductor thin film 12 is disposed on the semiconductor thin film 12. A semiconductor thin film 14, which is composed of a group III-V compound semiconductor with a lattice constant in a plane perpendicular to the crystal growth direction that is less than the semiconductor thin film 12, is disposed between the semiconductor thin film 12 and the oxygen generation promotion catalyst layer 13.
(FR)
L'invention concerne une électrode optique à semi-conducteur qui maintient l'efficacité de conversion d'énergie lumineuse pendant une longue période de temps. Dans l'électrode optique à semi-conducteur, un substrat conducteur composé d'un semi-conducteur composé du groupe III-V est utilisé, un film mince semi-conducteur composé d'un semi-conducteur composé du groupe III-V ayant une fonction photocatalytique est disposé sur le substrat, et une couche de catalyseur de promotion de la génération d'oxygène 13 ayant une fonction de catalyseur de promotion de génération d'oxygène par rapport au film mince semi-conducteur 12 est disposée sur le film mince semi-conducteur 12. Un film mince semi-conducteur 14, qui est composé d'un semi-conducteur composé du groupe III-V avec une constante de réseau dans un plan perpendiculaire à la direction de croissance cristalline qui est inférieure au film mince semi-conducteur 12, est disposée entre le film mince semi-conducteur 12 et la couche de catalyseur de promotion de génération d'oxygène 13.
(JA)
光エネルギー変換効率を長時間維持する半導体光電極を提供する。半導体光電極において、III-V族化合物半導体からなる導電性の基板11を用い、基板11上に光触媒機能を有するIII-V族化合物半導体からなる半導体薄膜12を配置し、半導体薄膜12上に半導体薄膜12に対して酸素生成助触媒機能を有する酸素生成助触媒層13を配置する。半導体薄膜12と酸素生成助触媒層13との間に、結晶成長方向と垂直の面における格子定数が半導体薄膜12よりも小さいIII-V族化合物半導体からなる半導体薄膜14を配置する。
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