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1. WO2020116147 - FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/116147
Publication Date 11.06.2020
International Application No. PCT/JP2019/045211
International Filing Date 19.11.2019
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
CPC
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
Applicants
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
Inventors
  • 杉山 弘樹 SUGIYAMA, Hiroki
Agents
  • 山川 茂樹 YAMAKAWA, Shigeki
  • 小池 勇三 KOIKE, Yuzo
  • 山川 政樹 YAMAKAWA, Masaki
  • 本山 泰 MOTOYAMA, Yasushi
Priority Data
2018-22704304.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME
(FR) TRANSISTOR À EFFET DE CHAMP ET SON PROCÉDÉ DE FABRICATION
(JA) 電界効果トランジスタおよびその製造方法
Abstract
(EN)
In the present invention, a buffer layer (102), an etch-stop layer (103), and a channel layer (104) are epitaxially grown, in this order, on a substrate (101). The substrate (101) is constituted, for example, by InP made to have high resistance by doping with Fe. The buffer layer (102) is constituted by a compound semiconductor lattice-matched to the InP. The etch-stop layer (103) is constituted by InxAl1-xP (0≤x≤0.75). The channel layer (104) is constituted by InyGa1-yAs(0(FR)
Dans la présente invention, une couche tampon (102), une couche d'arrêt de gravure (103) et une couche de canal (104) sont cultivées de manière épitaxiale, dans cet ordre, sur un substrat (101). Le substrat (101) est constitué, par exemple, de InP conçu pour avoir une résistance élevée par dopage avec Fe. La couche tampon (102) est constituée d'un réseau semi-conducteur composé apparié à l'InP. La couche d'arrêt de gravure (103) est constituée de InxAl1-xP (0 ≤ x ≤ 0,75). La couche de canal (104) est constituée de InyGa1-yAs (0 < y ≤ 1).
(JA)
基板(101)の上に、バッファ層(102)、エッチング停止層(103)、チャネル層(104)を、これらの順にエピタキシャル成長する。基板(101)は、例えば、Feをドープすることで高抵抗としたInPから構成する。バッファ層(102)は、InPに格子整合する化合物半導体から構成する。エッチング停止層(103)は、InxAl1-xP(0≦x≦0.75)から構成する。チャネル層(104)は、InyGa1-yAs(0<y≦1)から構成する。
Also published as
Latest bibliographic data on file with the International Bureau