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1. WO2020116040 - SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Publication Number WO/2020/116040
Publication Date 11.06.2020
International Application No. PCT/JP2019/041079
International Filing Date 18.10.2019
IPC
H01L 21/3205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 橋口 日出登 HASHIGUCHI Hideto
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 小林 龍 KOBAYASHI Toru
  • 森 哲也 MORI Tetsuya
Priority Data
2018-22734904.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTRONIQUE
(JA) 半導体装置及び電子機器
Abstract
(EN)
The present invention provides: a semiconductor device which has improved bondability between a first electrode part and a second electrode part facing each other; and an electronic device. A semiconductor device according to the present invention is provided with: a first wiring part; a first interlayer insulating film which covers one surface of the first wiring part; a first electrode part which is provided within a first through hole that is formed in the first interlayer insulating film, and which is electrically connected to the first wiring part; a second wiring part; a second interlayer insulating film which covers a surface of the second wiring part, said surface facing the first wiring part; and a second electrode part which is provided within a second through hole that is formed in the second interlayer insulating film, and which is electrically connected to the second wiring part. The first electrode part and the second electrode part are directly bonded to each other. The thermal expansion coefficient of the first electrode part is higher than the thermal expansion coefficient of the first wiring part.
(FR)
La présente invention concerne : un dispositif à semi-conducteur qui a une capacité de liaison améliorée entre une première partie d'électrode et une seconde partie d'électrode se faisant face ; et un dispositif électronique. Un dispositif à semi-conducteur selon la présente invention comprend : une première partie de câblage ; un premier film isolant intercouche qui recouvre une surface de la première partie de câblage ; une première partie d'électrode qui est disposée à l'intérieur d'un premier trou traversant qui est formé dans le premier film isolant intercouche, et qui est électriquement connectée à la première partie de câblage ; une seconde partie de câblage ; un second film isolant intercouche qui recouvre une surface de la seconde partie de câblage, ladite surface faisant face à la première partie de câblage ; et une seconde partie d'électrode qui est disposée à l'intérieur d'un second trou traversant qui est formé dans le second film isolant intercouche, et qui est électriquement connecté à la seconde partie de câblage La première partie d'électrode et la seconde partie d'électrode sont directement liées l'une à l'autre. Le coefficient de dilatation thermique de la première partie d'électrode est supérieur au coefficient de dilatation thermique de la première partie de câblage.
(JA)
互いに対向する第1電極部と第2電極部との接合性を向上できるようにした半導体装置及び電子機器を提供する。半導体装置は、第1配線部と、第1配線部の一方の面側を覆う第1層間絶縁膜と、第1層間絶縁膜に設けられる第1貫通孔内に設けられ、第1配線部と電気的に接続する第1電極部と、第2配線部と、第2配線部において第1配線部と対向する面側を覆う第2層間絶縁膜と、第2層間絶縁膜に設けられる第2貫通孔内に設けられ、第2配線部と電気的に接続する第2電極部と、を備える。第1電極部と第2電極部は互いに直接接合される。第1電極部の熱膨張率は、第1配線部の熱膨張率よりも大きい。
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