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1. WO2020116016 - THERMAL SENSOR AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

Publication Number WO/2020/116016
Publication Date 11.06.2020
International Application No. PCT/JP2019/039498
International Filing Date 07.10.2019
IPC
G01N 25/58 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
25Investigating or analysing materials by the use of thermal means
56by investigating moisture content
58by measuring changes of properties of the material due to heat, cold, or expansion
G01F 1/692 2006.01
GPHYSICS
01MEASURING; TESTING
FMEASURING VOLUME, VOLUME FLOW, MASS FLOW, OR LIQUID LEVEL; METERING BY VOLUME
1Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through the meter in a continuous flow
68by using thermal effects
684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
688using a particular type of heating, cooling or sensing element
69of resistive type
692Thin-film arrangements
H01L 29/84 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
84controllable by variation of applied mechanical force, e.g. of pressure
CPC
B81B 1/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
1Devices without movable or flexible elements, e.g. microcapillary devices
G01F 1/692
GPHYSICS
01MEASURING; TESTING
FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
1Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through the meter in a continuous flow
68by using thermal effects
684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
688using a particular type of heating, cooling or sensing element
69of resistive type
692Thin-film arrangements
G01N 25/58
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
25Investigating or analyzing materials by the use of thermal means
56by investigating moisture content
58by measuring changes of properties of the material due to heat, cold or expansion
H01L 29/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
84controllable by variation of applied mechanical force, e.g. of pressure
Applicants
  • 日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP]/[JP]
Inventors
  • 佐久間 憲之 SAKUMA, Noriyuki
  • 中野 洋 NAKANO, Hiroshi
  • 小貫 洋 ONUKI, Hiroshi
  • 安藤 亮 ANDO, Ryo
Agents
  • 特許業務法人筒井国際特許事務所 TSUTSUI & ASSOCIATES
Priority Data
2018-22834805.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THERMAL SENSOR AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE
(FR) CAPTEUR THERMIQUE, PROCÉDÉ DE FABRICATION CORRESPONDANT ET DISPOSITIF À SEMI-CONDUCTEUR
(JA) 熱式センサおよびその製造方法並びに半導体装置
Abstract
(EN)
The objective of the present invention is to improve the performance of a thermal sensor. In a thermal humidity sensor, a gap (space) between a first part (11a) and a second part (11b) forming a heater (11) has embedded therein an insulating film (30) which has a tensile stress and the thickness of which in a film thickness direction is less than the thickness of the heater (11), and a portion of an insulating film (6) having a compressive stress.
(FR)
L'objectif de la présente invention est d'améliorer les performances d'un capteur thermique. Dans un capteur d'humidité thermique, une ouverture (espace) entre une première partie (11a) et une seconde partie (11b) formant un élément chauffant (11) comprend, incorporé dans ce dernier, un film isolant (30) présentant une contrainte de traction et dont l'épaisseur dans une direction d'épaisseur de film est inférieure à l'épaisseur du dispositif de chauffage (11), une partie d'un film isolant (6) présentant une contrainte de compression.
(JA)
熱式センサの性能向上を図る。熱式湿度センサでは、ヒータ(11)を構成する第1部分(11a)と第2部分(11b)との間の隙間(スペース)に、引張応力を有し、かつ、膜厚方向の厚さがヒータ(11)の厚さよりも小さい絶縁膜(30)と、圧縮応力を有する絶縁膜(6)の一部とが埋め込まれている。
Also published as
Latest bibliographic data on file with the International Bureau