Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020115980 - FILM-FORMING APPARATUS AND FILM-FORMING METHOD

Publication Number WO/2020/115980
Publication Date 11.06.2020
International Application No. PCT/JP2019/035460
International Filing Date 10.09.2019
IPC
C23C 14/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/12 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
12Organic material
C23C 14/24 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
C23C 14/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/12
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
12Organic material
C23C 14/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
Inventors
  • 矢島 貴浩 YAJIMA, Takahiro
  • 中村 文生 NAKAMURA, Fumio
  • 加藤 裕子 KATO, Yuko
  • 植 喜信 UE, Yoshinobu
  • 小倉 祥吾 OGURA, Shougo
Agents
  • 大森 純一 OMORI, Junichi
Priority Data
2018-22677203.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM-FORMING APPARATUS AND FILM-FORMING METHOD
(FR) APPAREIL DE FORMATION DE FILM ET PROCÉDÉ DE FORMATION DE FILM
(JA) 成膜装置および成膜方法
Abstract
(EN)
This film-forming apparatus according to one embodiment comprises: a chamber; a stage; a light source unit; a gas supply unit; and a cleaning unit. The chamber includes a chamber body having a film-forming chamber, and a top plate that has a window section and that is attached to the chamber body. The stage includes a support surface that is disposed in the film-forming chamber and that supports a substrate. The light source unit includes an irradiation source that is installed at the top plate and that irradiates an energy beam onto the support surface via the window section. The gas supply unit supplies, to the film-forming chamber, a raw material gas containing an energy beam-curable resin that is cured by being irradiated with the energy beam. The cleaning unit is connected to the chamber and introduces, to the film-forming chamber, a cleaning gas that removes the energy beam-curable resin that has adhered to the top plate and to the chamber.
(FR)
L'invention concerne un appareil de formation de film qui, selon un mode de réalisation, comprend : une chambre; un étage; une unité de source de lumière; une unité d'alimentation en gaz; et une unité de nettoyage. La chambre comprend un corps de chambre ayant une chambre de formation de film, et une plaque supérieure qui a une section fenêtre et qui est fixée au corps de chambre. L'étage comprend une surface de support qui est disposée dans la chambre de formation de film et qui supporte un substrat. L'unité de source de lumière comprend une source d'irradiation qui est installée au niveau de la plaque supérieure et qui irradie un faisceau d'énergie sur la surface de support par l'intermédiaire de la section fenêtre. L'unité d'alimentation en gaz fournit, à la chambre de formation de film, un gaz de matière première contenant une résine durcissable par faisceau d'énergie qui est durcie en étant irradiée avec le faisceau d'énergie. L'unité de nettoyage est reliée à la chambre et introduit, dans la chambre de formation de film, un gaz de nettoyage qui élimine la résine durcissable par faisceau d'énergie qui a adhéré à la plaque supérieure et à la chambre.
(JA)
本発明の一形態に係る成膜装置は、チャンバと、ステージと、光源ユニットと、ガス供給部と、クリーニングユニットとを具備する。前記チャンバは、成膜室を有するチャンバ本体と、窓部を有し前記チャンバ本体に取り付けられた天板とを有する。前記ステージは、前記成膜室に配置され、基板を支持する支持面を有する。前記光源ユニットは、前記天板に設置され、前記窓部を介してエネルギ線を前記支持面に照射する照射源を有する。前記ガス供給部は、前記エネルギ線の照射を受けて硬化するエネルギ線硬化樹脂を含む原料ガスを前記成膜室に供給する。前記クリーニングユニットは、前記チャンバに接続され、前記天板やチャンバに付着した前記エネルギ線硬化樹脂を除去するクリーニングガスを前記成膜室へ導入する。
Latest bibliographic data on file with the International Bureau