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1. WO2020115950 - METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE

Publication Number WO/2020/115950
Publication Date 11.06.2020
International Application No. PCT/JP2019/031349
International Filing Date 08.08.2019
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/42 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42Silicides
C23C 16/52 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
52Controlling or regulating the coating process
C30B 25/16 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
16Controlling or regulating
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 伊東 洋典 ITOH, Hironori
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2018-22791305.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE
(FR) PROCÉDÉ DE PRODUCTION DE SUBSTRAT ÉPITAXIAL DE CARBURE DE SILICIUM
(JA) 炭化珪素エピタキシャル基板の製造方法
Abstract
(EN)
According to the present invention, if the flow rate of a first ammonia gas in a step for forming a first silicon carbide layer by epitaxial growth is taken as the first flow rate, the formation time of the first silicon carbide layer in the step for forming the first silicon carbide layer by epitaxial growth is taken as the first formation time, the thickness of the first silicon carbide layer is taken as the first thickness, the carrier concentration of the first silicon carbide layer is taken as the first concentration, the target thickness of a second silicon carbide layer is taken as the second thickness, and the target carrier concentration of the second silicon carbide layer is taken as the second concentration, the formation time of the second silicon carbide layer is calculated as a value that is obtained by multiplying the value, which has been obtained by dividing the second thickness by the first thickness, by the first formation time in a step for calculating the conditions for the formation of the second silicon carbide layer, while the flow rate of a second ammonia gas in a step for forming the second silicon carbide layer by epitaxial growth is calculated as a value that is obtained by multiplying the value, which has been obtained by dividing the second concentration by the first concentration, by the first flow rate.
(FR)
Selon la présente invention, si le débit d'un premier gaz ammoniac dans une étape pour former une première couche de carbure de silicium par croissance épitaxiale est pris comme premier débit, le temps de formation de la première couche de carbure de silicium dans l'étape pour former la première couche de carbure de silicium par croissance épitaxiale est pris comme premier temps de formation, l'épaisseur de la première couche de carbure de silicium est prise comme première épaisseur, la concentration de porteurs de la première couche de carbure de silicium est prise comme première concentration, l'épaisseur cible d'une seconde couche de carbure de silicium est prise comme seconde épaisseur, et la concentration de porteurs cible de la seconde couche de carbure de silicium est prise en tant que seconde concentration, le temps de formation de la seconde couche de carbure de silicium est calculé en tant que valeur qui est obtenue par multiplication de la valeur, qui a été obtenue en divisant la seconde épaisseur par la première épaisseur, par le premier temps de formation dans une étape pour calculer les conditions pour la formation de la seconde couche de carbure de silicium, tandis que le débit d'un second gaz ammoniac dans une étape de formation de la seconde couche de carbure de silicium par croissance épitaxiale est calculé en tant que valeur qui est obtenue par multiplication de la valeur, qui a été obtenue en divisant la seconde concentration par la première concentration, par le premier débit.
(JA)
第1炭化珪素層をエピタキシャル成長により形成する工程における第1アンモニアガスの流量を第1流量とし、第1炭化珪素層をエピタキシャル成長により形成する工程における第1炭化珪素層の形成時間を第1形成時間とし、第1炭化珪素層の厚みを第1厚みとし、第1炭化珪素層のキャリア濃度を第1濃度とし、第2炭化珪素層の目標厚みを第2厚みとし、第2炭化珪素層の目標キャリア濃度を第2濃度とした場合、第2炭化珪素層の形成条件を算出する工程においては、第2炭化珪素層の形成時間は、第2厚みを第1厚みで除した値に第1形成時間を掛けた値として算出され、かつ、第2炭化珪素層をエピタキシャル成長により形成する工程における第2アンモニアガスの流量は、第2濃度を第1濃度で除した値に第1流量を掛けた値として算出される。
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