Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020115906 - DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/115906
Publication Date 11.06.2020
International Application No. PCT/JP2018/045150
International Filing Date 07.12.2018
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
G09F 9/30 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
H05B 33/10 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 斉藤 貴翁 SAITOH Takao
  • 三輪 昌彦 MIWA Masahiko
  • 神崎 庸輔 KANZAKI Yohsuke
  • 山中 雅貴 YAMANAKA Masaki
  • 孫 屹 SUN Yi
Agents
  • 特許業務法人前田特許事務所 MAEDA & PARTNERS
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF D'AFFICHAGE ET SON PROCÉDÉ DE FABRICATION
(JA) 表示装置及びその製造方法
Abstract
(EN)
Each pixel circuit comprises a TFT and a capacitor which includes a gate electrode (14a) that is provided island-shaped in the TFT, a first inorganic insulating film that is provided on the gate electrode (14a), and a capacitive electrode (16c) that is provided on the first inorganic insulating film so as to overlap the gate electrode (14a), wherein the angle between the upper face of a base substrate and at least one portion of a peripheral end face of the gate electrode (14a) along the peripheral direction in a portion that does not overlap a semiconductor layer (12a) is greater than the angle between the upper face of the base substrate and the peripheral end face of the gate electrode (14a) in a portion that overlaps the semiconductor layer (12a) in a plan view.
(FR)
Dans la présente invention, chaque circuit de pixel comprend un TFT et un condensateur qui comporte une électrode grille (14a) disposée en forme d'îlot dans le TFT, un premier film isolant inorganique disposé sur l'électrode grille (14a), et une électrode capacitive (16c) disposée sur le premier film isolant inorganique de façon à chevaucher l'électrode grille (14a), l'angle entre la face supérieure d'un substrat de base et au moins une partie d'une face d'extrémité périphérique de l'électrode grille (14a) dans la direction périphérique dans une partie qui ne chevauche pas une couche semi-conductrice (12a) étant supérieur à l'angle entre la face supérieure du substrat de base et la face d'extrémité périphérique de l'électrode grille (14a) dans une partie qui chevauche la couche semi-conductrice (12a) dans une vue en plan.
(JA)
各画素回路は、TFTと、TFTの島状に設けられたゲート電極(14a)、ゲート電極(14a)上に設けられた第1無機絶縁膜、及びその第1無機絶縁膜上にゲート電極(14a)に重なるように設けられた容量電極(16c)を含むキャパシタとを備え、半導体層(12a)に重ならない部分におけるゲート電極(14a)の周端面の周方向に沿う少なくとも一部とベース基板の上面とのなす角度は、半導体層(12a)に平面視で重なる部分におけるゲート電極(14a)の周端面とベース基板の上面とのなす角度よりも大きくなっている。
Latest bibliographic data on file with the International Bureau