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1. WO2020115869 - SUBSTRATE FOR SEMICONDUCTOR DEVICE

Publication Number WO/2020/115869
Publication Date 11.06.2020
International Application No. PCT/JP2018/044943
International Filing Date 06.12.2018
IPC
H01L 23/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
C04B 37/02 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
37Joining burned ceramic articles with other burned ceramic articles or other articles by heating
02with metallic articles
H01L 23/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H05K 1/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
H05K 1/03 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
03Use of materials for the substrate
CPC
C04B 37/02
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
37Joining burned ceramic articles with other burned ceramic articles or other articles by heating
02with metallic articles
H01L 23/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 23/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
H05K 1/02
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
H05K 1/03
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
03Use of materials for the substrate
Applicants
  • 日本碍子株式会社 NGK INSULATORS, LTD. [JP]/[JP]
  • NGKエレクトロデバイス株式会社 NGK ELECTRONICS DEVICES, INC. [JP]/[JP]
Inventors
  • 梅田 勇治 UMEDA, Yuji
Agents
  • 新樹グローバル・アイピー特許業務法人 SHINJYU GLOBAL IP
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE FOR SEMICONDUCTOR DEVICE
(FR) SUBSTRAT POUR DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置用基板
Abstract
(EN)
This substrate for a semiconductor device (2) comprises: a ceramic sintered body (3); a first circuit board (4); and a second circuit board (4'). In the ceramic sintered body (3), when the content of Mg by MgO conversion is S1 mass%, and the content of Zr by ZrO2 conversion is S2 mass%, general formula 1 is established. When the thickness of the first circuit board (4) is T1 mm, the thickness of the second circuit board (4') is T2 mm, and the thickness of the ceramic sintered body (3) is T3 mm, formulas 2, 3, and 4 are established. –0.004 x S2 + 0.171 < S1 < –0.032 x S2 + 1.427 (1) 1.7 < (T1 + T2)/T3 <3.5 (2) T1 ≥ T2 (3) T3 ≥ 0.25 (4)
(FR)
Le présent substrat pour un dispositif à semi-conducteur (2) comprend : un corps fritté en céramique (3) ; une première carte de circuit imprimé (4) ; et une seconde carte de circuit imprimé (4'). Dans le corps fritté en céramique (3), lorsque la teneur en Mg par conversion de MgO est de S1 % en masse, et la teneur en Zr par conversion de ZrO2 est de S2 % en masse, la formule générale 1 est établie. Lorsque l'épaisseur de la première carte de circuit imprimé (4) est de T1 mm, l'épaisseur de la seconde carte de circuit imprimé (4') est de T2 mm, et l'épaisseur du corps fritté en céramique (3) est de T3 mm, les formules 2, 3 et 4 sont établies. –0,004 x S2 + 0,171 < S1 < –0,032 x S2 + 1,427 (1) 1,7 < (T1 + T2)/T3 <3,5 (2) T1 ≥ T2 (3) T3 ≥ 0,25 (4)
(JA)
半導体装置用基板(2)は、セラミックス焼結体(3)と、第1回路板(4)と、第2回路板(4')とを備える。セラミックス焼結体(3)において、MgのMgO換算での含有量をS1質量%とし、ZrのZrO換算での含有量をS2質量%とした場合、下記の式1が成立する。第1回路板(4)の厚さをT1mmとし、第2回路板(4')の厚さをT2mmとし、セラミックス焼結体(3)の厚さをT3mmとした場合、下記の式2、3、4が成立する。 -0.004×S2+0.171<S1<-0.032×S2+1.427・・・(1) 1.7<(T1+T2)/T3<3.5・・・(2) T1≧T2・・・(3) T3≧0.25・・・(4)
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