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1. WO2020115328 - AN OPTOELECTRONIC APPARATUS, A READING-OUT METHOD, AND A USES OF THE OPTOELECTRONIC APPARATUS

Publication Number WO/2020/115328
Publication Date 11.06.2020
International Application No. PCT/EP2019/084208
International Filing Date 09.12.2019
IPC
H04N 5/374 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/353 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
353Control of the integration time
H01L 51/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14665Imagers using a photoconductor layer
H04N 5/3532
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
353Control of the integration time
3532by controlling rolling shutters
H04N 5/374
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
Applicants
  • FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES [ES]/[ES]
  • INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANCATS [ES]/[ES]
Inventors
  • GOOSSENS, Stijn
  • KOPPENS, Frank
  • KONSTANTATOS, Gerasimos
Agents
  • PONTI & PARTNERS, S.L.P.
Priority Data
18382901.907.12.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AN OPTOELECTRONIC APPARATUS, A READING-OUT METHOD, AND A USES OF THE OPTOELECTRONIC APPARATUS
(FR) APPAREIL OPTOÉLECTRONIQUE, PROCÉDÉ DE LECTURE, ET UTILISATIONS DE L'APPAREIL OPTOÉLECTRONIQUE
Abstract
(EN)
The present invention relates to an optoelectronic apparatus, comprising: - an optoelectronic device comprising: - a transport structure (T) comprising a 2-dimensional layer; - a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and - drain (D) and source (S) electrodes electrically connected to the transport structure (T); - a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time τtr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.
(FR)
La présente invention concerne un appareil optoélectronique, comprenant : - un dispositif optoélectronique comprenant : - une structure de transport (T) comprenant une couche bidimensionnelle; - une structure de photosensibilisation (P) pour absorber la lumière incidente et induire des changements de la conductivité électrique de la structure de transport (T); et - un drain (D) et des électrodes de source (S) électriquement connectées à la structure de transport (T); - une unité de lecture pour lire un signal électrique, généré au niveau d'un canal de transport de la structure de transport (T), après qu'un intervalle de temps d'intégration tint a réussi, et pendant un accèst qui est au moins 10 fois plus court que tint, tint étant plus long qu'un temps de piégeage prédéterminé τ tr . La présente invention concerne également un procédé de lecture, comprenant la réalisation d'opérations de l'unité de lecture de l'appareil de l'invention, et l'utilisation de l'appareil en tant de détecteur de lumière ou en tant que capteur d'image.
Also published as
Latest bibliographic data on file with the International Bureau