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1. WO2020115279 - ELECTROLESS NICKEL OR COBALT PLATING SOLUTION

Publication Number WO/2020/115279
Publication Date 11.06.2020
International Application No. PCT/EP2019/083995
International Filing Date 06.12.2019
IPC
C23C 18/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, i.e. electroless plating
31Coating with metals
32Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals
34using reducing agents
H05K 3/18 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
10in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
18using precipitation techniques to apply the conductive material
H01L 21/288 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
288from a liquid, e.g. electrolytic deposition
CPC
C23C 18/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, e.g. electroless plating
31Coating with metals
32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
34using reducing agents
H01L 21/288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
H05K 3/181
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
10in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
18using precipitation techniques to apply the conductive material
181by electroless plating
Applicants
  • ATOTECH DEUTSCHLAND GMBH [DE]/[DE]
Inventors
  • TUNA, Kadir
  • LAMPRECHT, Sven
Agents
  • SCHULZ, Hendrik
Priority Data
18211104.707.12.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTROLESS NICKEL OR COBALT PLATING SOLUTION
(FR) SOLUTION DE DÉPÔT AUTOCATALYTIQUE DE NICKEL OU DE COBALT
Abstract
(EN)
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ ions as reducing agent for reducing said nickel ions and cobalt ions, - one or more than one complexing agent independently selected from the group consisting of - an organic phosphonic acid compound, its salts and esters, - an organic polyphosphoric acid compound, its salts and esters, and - an inorganic polyphosphoric acid compound, its salts and esters, wherein the molar ratio of the complexing agent to the Ti3+ ions is 1.5 : 1 or higher, and the plating solution does not comprise citric acid, salts thereof, and tin.
(FR)
La présente invention concerne une solution de dépôt autocatalytique de nickel ou de cobalt, comprenant - des ions nickel ou des ions cobalt, - des ions Ti3+ utilisés comme agent réducteur pour réduire lesdits ions nickel et ions cobalt, - un ou plusieurs agents complexants indépendamment choisis dans le groupe constitué par - un composé acide phosphonique organique, ses sels et esters, - un composé acide polyphosphorique organique, ses sels et esters, et - un composé acide polyphosphorique inorganique, ses sels et esters, le rapport molaire de l'agent complexant aux ions Ti3+ étant supérieur ou égal à 1,5:1, et la solution de placage ne comprenant pas d'acide citrique, ni ses sels, ni de l'étain.
Latest bibliographic data on file with the International Bureau