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1. WO2020115209 - OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/115209
Publication Date 11.06.2020
International Application No. PCT/EP2019/083824
International Filing Date 05.12.2019
IPC
H01L 25/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
16the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
G02B 6/42 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
24Coupling light guides
42Coupling light guides with opto-electronic elements
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
H01L 33/60 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
H01L 31/167 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16the semiconductor device sensitive to radiation being controlled by the light source or sources
167the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
CPC
F21S 41/147
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
10characterised by the light source
14characterised by the type of light source
141Light emitting diodes [LED]
147the main emission direction of the LED being angled to the optical axis of the illuminating device
G02B 6/4214
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
24Coupling light guides
42Coupling light guides with opto-electronic elements
4201Packages, e.g. shape, construction, internal or external details
4204the coupling comprising intermediate optical elements, e.g. lenses, holograms
4214the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 31/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16the semiconductor device sensitive to radiation being controlled by the light source or sources
167the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 33/58
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • JAEGER, Claus
Agents
  • ZACCO PATENT- & RECHTSANWÄLTE
Priority Data
10 2018 131 024.205.12.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHE VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG DERSELBEN
(EN) OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME
(FR) DISPOSITIF OPTOÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
Abstract
(DE)
Eine optoelektronische Vorrichtung umfasst wenigstens ein optoelektronisches Halbleiterbauteil (11), ein Träger (15), auf dessen Oberseite (13) das Halbleiterbauteil (11) angeordnet ist, und wenigstens einen, dem optoelektronischen Halbleiterbauteil (11) zugeordneten Lichtkanal (17), der sich zwischen einem ersten Ende (21) des Lichtkanals (17), das von einer lichtaktiven Oberfläche (23) des Halbleiterbauteils (11) entfernt liegt und das eine Mündung (25) in den Außenraum aufweist, und einem zweiten Ende (27) des Lichtkanals (17) erstreckt, das eine auf die lichtaktive Oberfläche (23) des Halbleiterbauteils (11) gerichtete Mündung (29) aufweist, wobei der Lichtkanal (17) einen sich zwischenden beiden Enden (21, 27) erstreckenden Hohlraum (31) aufweist, wobei eine Innenwand (33) den Hohlraum (31) umgibt, wobei sich der wenigstens eine Lichtkanal (17) zwischen seinem jeweiligen ersten und zweiten Ende (21, 27) nicht geradlinig und bevorzugt längs einer gekrümmten Verlaufsrichtung erstreckt, und wobei wenigstens ein Teilbereich der Innenwand (33) oder die gesamte Innenwand (33) reflektierend ausgestaltet ist.
(EN)
The invention relates to an optoelectronic device comprising at least one optoelectronic semiconductor component (11), a support (15), on the upper side (13) of which the semiconductor component (11) is arranged, and at least one light channel (17) which is assigned to the optoelectronic semiconductor component (11) and extends between a first end (21) of the light channel (17), which is remote from a photoactive surface (23) of the semiconductor component (11) and has an opening (25) into the surrounding space, and a second end (27) of the light channel (17), which has an opening (29) directed onto the photoactive surface (23) of the semiconductor component (11). The light channel (17) comprises a hollow space (31) extending between the two ends (21, 27), an internal wall (33) enclosing the hollow space (31). The at least one light channel (17) between the first and second ends (21, 27) thereof extends not in a straight line and preferably along a curved path. At least one portion of the internal wall (33) or the entire internal wall (33) is reflective.
(FR)
Dispositif optoélectronique, comprenant au moins un composant semi-conducteur (11) optoélectronique, un support (15) sur la surface (13) duquel est disposé le composant semi-conducteur (11), et au moins un canal de lumière (17), associé au composant semi-conducteur (11) optoélectronique, qui s’étend entre une première extrémité (21) du canal de lumière (17), qui est éloignée d’une surface optiquement active (23) du composant semi-conducteur (11) et qui comprend une embouchure (25) dans l’espace extérieur, et une seconde extrémité (27) du canal de lumière (17) qui comprend une embouchure (29) dirigée vers la surface optiquement active (23) du composant semi-conducteur (11), le canal de lumière (17) comprenant un espace creux (31) s’étendant entre les deux extrémités (21, 27). Une paroi interne (33) entoure l’espace creux (31). Le ou les canaux de lumière (17) s’étendent entre leurs première et seconde extrémités (21, 27) respectives de manière non rectiligne et, de préférence, le long d’une ligne courbe, et au moins une zone partielle de la paroi interne (33) ou toute la paroi interne (33) est conçue réfléchissante.
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