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1. WO2020114729 - METHOD FOR ADJUSTING A TARGET FEATURE IN A MODEL OF A PATTERNING PROCESS BASED ON LOCAL ELECTRIC FIELDS

Publication Number WO/2020/114729
Publication Date 11.06.2020
International Application No. PCT/EP2019/080996
International Filing Date 12.11.2019
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 1/70 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20-G03F1/5096
70Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
CPC
G03F 1/70
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20 - G03F1/50
70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
G03F 7/705
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
G03F 7/70675
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70675using latent image
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • VAN HAREN, Richard, Johannes, Franciscus
  • VAN DIJK, Leon, Paul
  • YILDIRIM, Oktay
  • MOURAILLE, Orion, Jonathan, Pierre
Agents
  • PETERS, John
Priority Data
18211056.907.12.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR ADJUSTING A TARGET FEATURE IN A MODEL OF A PATTERNING PROCESS BASED ON LOCAL ELECTRIC FIELDS
(FR) PROCÉDÉ D'AJUSTEMENT D'UNE CARACTÉRISTIQUE CIBLE DANS UN MODÈLE D'UN PROCESSUS DE FORMATION DE MOTIFS SUR LA BASE DE CHAMPS ÉLECTRIQUES LOCAUX
Abstract
(EN)
A method for adjusting a target feature in a model of a patterning process based on local electric fields estimated for the patterning process is described. The method comprises obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method comprises estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method comprises adjusting the target feature based on the estimated local electric field.
(FR)
L'invention concerne un procédé d'ajustement d'une caractéristique cible dans un modèle d'un processus de formation de motifs sur la base de champs électriques locaux estimés pour le processus de formation de motifs. Le procédé comprend l'obtention d'une région d'intérêt d'empilement de masques. La région d'intérêt d'empilement de masques possède une ou plusieurs caractéristiques associées à la propagation d'ondes électromagnétiques à travers la région d'intérêt d'empilement de masques. La région d'intérêt d'empilement de masques comprend la caractéristique cible. Le procédé consiste en l'estimation d'un champ électrique local sur la base d'une ou de plusieurs caractéristiques associées à la propagation d'ondes électromagnétiques à travers la région d'intérêt d'empilement de masques. Le champ électrique local est estimé pour une partie de la région d'intérêt d'empilement de masques à proximité de la caractéristique cible. Le procédé consiste à ajuster la caractéristique cible sur la base du champ électrique local estimé.
Also published as
Latest bibliographic data on file with the International Bureau