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1. WO2020114533 - METHOD FOR ELECTRICALLY EXAMINING ELECTRONIC COMPONENTS OF AN INTEGRATED CIRCUIT

Publication Number WO/2020/114533
Publication Date 11.06.2020
International Application No. PCT/DE2019/000295
International Filing Date 08.11.2019
IPC
G01Q 30/02 2010.01
GPHYSICS
01MEASURING; TESTING
QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING-PROBE MICROSCOPY
30Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
02Non-SPM analysing devices, e.g. SEM , spectrometer or optical microscope
G01Q 60/30 2010.01
GPHYSICS
01MEASURING; TESTING
QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING-PROBE MICROSCOPY
60Particular types of SPM or apparatus therefor; Essential components thereof
24AFM or apparatus therefor, e.g. AFM probes
30Scanning potential microscopy
H01J 37/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron- or ion-diffraction tubes
28with scanning beams
CPC
G01Q 30/02
GPHYSICS
01MEASURING; TESTING
QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
30Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
02Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
G01Q 60/30
GPHYSICS
01MEASURING; TESTING
QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
60Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
30Scanning potential microscopy
H01J 2237/2583
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
25Tubes for localised analysis using electron or ion beams
2505characterised by their application
2583using tunnel effects, e.g. STM, AFM
H01J 2237/2814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
28Scanning microscopes
2813characterised by the application
2814Measurement of surface topography
H01J 2237/2817
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
28Scanning microscopes
2813characterised by the application
2817Pattern inspection
H01J 37/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron or ion diffraction tubes
28with scanning beams
Applicants
  • FORSCHUNGSZENTRUM JÜLICH GMBH [DE]/[DE]
Inventors
  • VOIGTLÄNDER, Bert
  • CHEPERANOV, Vasily
Priority Data
10 2018 009 623.907.12.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR ELEKTRISCHEN UNTERSUCHUNG VON ELEKTRONISCHEN BAUELEMENTEN EINES INTEGRIERTEN SCHALTKREISES
(EN) METHOD FOR ELECTRICALLY EXAMINING ELECTRONIC COMPONENTS OF AN INTEGRATED CIRCUIT
(FR) PROCÉDÉ D'EXAMEN ÉLECTRIQUE DE COMPOSANTS ÉLECTRONIQUES D'UN CIRCUIT INTÉGRÉ
Abstract
(DE)
Die Erfindung betrifft ein Verfahren zur elektrischen Untersuchung von elektronischen Bauelementen eines integrierten Schaltkreises. Erfindungsgemäß wird ein Verfahren zur elektrischen Untersuchung von elektronischen Bauelementen eines integrierten Schaltkreises (1), umfassend einen zu untersuchenden Zielbereich (3), in welchem sich elektronische Bauelemente mit Kontaktstellen (5) befinden, und einen restlichen Bereich, der als Nicht-Zielbereich (2) bezeichnet wird, zur Verfügung gestellt, bei dem mit einem kombinierten SEM/AFM-Nanoprober eine Untersuchung durchgeführt wird, wobei der Nicht-Zielbereich (2) in einem ersten Schritt mit dem Rasterelektronenmikroskop-Teil des SEM/AFM-Nanoprobers wenigstens teilweise abgebildet wird und der Zielbereich (3) in einem nachfolgenden Schritt mit dem Rasterkraftmikroskopischen Teil des SEM/AFM-Nanoprobers wenigstens teilweise abgebildet wird.
(EN)
The invention relates to a method for electrically examining electronic components of an integrated circuit. According to the invention, a method for electrically examining electronic components of an integrated circuit (1) is provided, comprising a target region (3) to be examined, in which electronic components having contact points (5) are located, and a residual region referred to as non-target region (2), in which an examination is carried out using a combined SEM/AFM nanaprobe. In a first step, the non-target region (2) is at least partially imaged with the scanning electron microscope part of the SEM/AFM nanaprobe, and in a subsequent step, the target region (3) is at least partially imaged with the scanning force microscope part of the SEM/AFM nanaprobe.
(FR)
L'invention concerne un procédé d'examen électrique de composants électroniques d'un circuit intégré. Selon le procédé d'examen électrique de composants électroniques d'un circuit intégré (1) comportant une zone cible à examiner (3) dans laquelle se trouvent des composants électroniques pourvus de zones de contact (5), et une zone restante appelée zone non-cible (2), un examen est réalisé au moyen d'un nano-échantillonneur SEM/AFM combiné, la zone non-cible (2) étant reproduite au moins partiellement dans une première étape au moyen de la partie microscope électronique à balayage du nano-échantillonneur SEM/AFM et la partie cible (3) étant reproduite au moins partiellement dans une étape consécutive au moyen de la partie microscope à force atomique du nano-échantillonneur SEM/AFM.
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