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1. WO2020114207 - METHOD AND DEVICE FOR CONTROLLING CONSTANT-DIAMETER GROWTH OF MONOCRYSTAL SILICON AND STORAGE MEDIUM

Publication Number WO/2020/114207
Publication Date 11.06.2020
International Application No. PCT/CN2019/117202
International Filing Date 11.11.2019
IPC
C30B 15/22 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • 隆基绿能科技股份有限公司 LONGI GREEN ENERGY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 王正远 WANG, Zhengyuan
  • 李侨 LI, Qiao
  • 徐战军 XU, Zhanjun
Agents
  • 北京润泽恒知识产权代理有限公司 BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM
Priority Data
201811465277.603.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD AND DEVICE FOR CONTROLLING CONSTANT-DIAMETER GROWTH OF MONOCRYSTAL SILICON AND STORAGE MEDIUM
(FR) PROCÉDÉ ET DISPOSITIF DE RÉGULATION DE CROISSANCE EN DIAMÈTRE CONSTANT DE SILICIUM MONOCTRISTALLIN, ET SUPPORT D'INFORMATIONS
(ZH) 单晶硅等径生长的控制方法、设备及存储介质
Abstract
(EN)
Disclosed are a method and device for controlling constant-diameter growth of monocrystal silicon and a storage medium, relating to the technical field of crystal manufacture. The method realizes automatic adjustment of the control for constant-diameter growth of crystal, and better control of the crystal diameter. The specific technical solution comprises the following steps: obtaining the initial value of PID in the ith cycle period; correcting the initial value of PID in the ith cycle period to obtain the corrected value of PID in the ith cycle period; and controlling the crystal growth diameter in the ith cycle period according to the corrected value of PID in the ith cycle period. The present application is used for controlling the constant-diameter growth of monocrystal silicon.
(FR)
La présente invention concerne un procédé et un dispositif de régulation de la croissance en diamètre constant de silicium monocristallin et un support d’informations, se rapportant au domaine technique de la fabrication de cristaux. Le procédé permet un ajustement automatique de la régulation de la croissance en diamètre constant d’un cristal, et une meilleure régulation du diamètre de cristal. La solution technique spécifique comprend les étapes suivantes constituant : à obtenir la valeur initiale de PID dans l'ième période de cycle ; à corriger la valeur initiale de PID dans l'ième période de cycle pour obtenir la valeur corrigée de PID dans l'ième période de cycle ; et à réguler le diamètre de croissance de cristal dans l'ième période de cycle en fonction de la valeur corrigée de PID dans l'ième période de cycle. La présente invention est utilisée pour commander la croissance en diamètre constant de silicium monocristallin.
(ZH)
一种单晶硅等径生长的控制方法、设备及存储介质,涉及晶体制造技术领域,能够能够自动调整晶体等径生长的控制力度,进而更好的控制晶体直径。具体技术方案为:获取第i个循环周期的PID初始值;对第i个循环周期的PID初始值进行修正,得到第i个循环周期的PID修正值;根据第i个循环周期的PID修正值控制第i个循环周期的晶体生长直径。本申请用于控制单晶硅的等径生长。
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