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1. WO2020113856 - PREPARATION METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE

Publication Number WO/2020/113856
Publication Date 11.06.2020
International Application No. PCT/CN2019/079192
International Filing Date 22.03.2019
IPC
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 向明 XIANG, Ming
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811477023.605.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARATION METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE
(FR) PROCÉDÉ DE PRÉPARATION DE SUBSTRAT DE MATRICE, SUBSTRAT DE MATRICE, PANNEAU D’AFFICHAGE, ET DISPOSITIF D’AFFICHAGE
(ZH) 阵列基板的制备方法、阵列基板、显示面板和显示装置
Abstract
(EN)
An embodiment of the present invention discloses a preparation method for an array substrate, the array substrate, a display panel, and a display device. In the embodiment of the present invention, a gate electrode insulating layer above a channel region is doped with fluorine atoms, and since a fluorine-containing inorganic layer can absorb hydrogen atoms, hydrogen atoms can be prevented from diffusing downwards into a metal oxide semiconductor so as to prevent same from affecting the electrical properties of a thin film transistor. In addition, only one kind of metal is needed to serve as a metal gate electrode layer, thereby simplifying the technological process and reducing the production cost.
(FR)
Un mode de réalisation de la présente invention concerne un procédé de préparation d’un substrat de matrice, le substrat de matrice, un panneau d’affichage, et un dispositif d’affichage. Selon le mode de réalisation de la présente invention, une couche isolante d’électrode de grille au-dessus d’une zone de canal est dopée avec des atomes de fluor, et puisqu’une couche inorganique contenant du fluor peut absorber des atomes d’hydrogène, des atomes d’hydrogène peuvent être empêchés de se diffuser vers le bas dans un semi-conducteur d’oxyde de métal afin de l’empêcher d’affecter les propriétés électriques d’un transistor à couche mince. Par ailleurs, un seul type de métal est nécessaire pour servir de couche d’électrode de grille en métal, simplifiant ainsi le processus technologique et réduisant le coût de production.
(ZH)
本发明实施例公开了一种阵列基板的制备方法、阵列基板、显示面板和显示装置。本发明实施例中将沟道区上方的栅极绝缘层掺杂氟原子,由于含氟的无机层能够吸收氢原子,因此能够阻挡氢原子向下扩散进入金属氧化物半导体,避免影响薄膜晶体管的电性,同时仅需使用一种金属作为金属栅极层,简化了工艺流程,降低了生产成本
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