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1. WO2020113795 - NEGATIVE PHOTORESIST MATERIAL AND APPLICATION THEREOF

Publication Number WO/2020/113795
Publication Date 11.06.2020
International Application No. PCT/CN2019/072425
International Filing Date 18.01.2019
IPC
G03F 7/038 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
CPC
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/038
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 李颖 LI, Ying
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811465317.703.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) NEGATIVE PHOTORESIST MATERIAL AND APPLICATION THEREOF
(FR) MATÉRIAU DE RÉSINE PHOTOSENSIBLE NÉGATIVE ET SON APPLICATION
(ZH) 负性光刻胶及其应用
Abstract
(EN)
A negative photoresist material and an application thereof. The negative photoresist material contains a pyrocatechol group. The negative photoresist material is applied and cured on a surface of a silicon substrate (1) to form a negative photoresist (2). The surface of the silicon substrate (1) has a hydroxyl structure. The negative photoresist material contains a pyrocatechol group. A hydrogen bond structure is formed between a hydroxyl structure in the pyrocatechol group and the hydroxyl structure of the silicon substrate. A compound containing a pyrocatechol group is added into a negative photoresist material, so that the hydroxyl in the pyrocatechol group and the hydroxyl in the silicon substrate (1) form a hydrogen bond, thereby improving the adhesion between the negative photoresist (2) formed by the negative photoresist material and the silicon substrate (1).
(FR)
La présente invention concerne un matériau de résine photosensible négative et son application. Le matériau de résine photosensible négative contient un groupe pyrocatéchol. Le matériau de résine photosensible négative est appliqué et durci sur une surface d'un substrat de silicium (1) de façon à former une résine photosensible négative (2). La surface du substrat de silicium (1) possède une structure hydroxyle. Le matériau de résine photosensible négative contient un groupe pyrocatéchol. Une structure de liaison hydrogène est formée entre une structure hydroxyle située dans le groupe pyrocatéchol et la structure hydroxyle du substrat de silicium. Un composé contenant un groupe pyrocatéchol est ajouté dans un matériau de résine photosensible négative de telle sorte que l'hydroxyle du groupe pyrocatéchol et l'hydroxyle du substrat de silicium (1) forment une liaison hydrogène, ce qui permet d'améliorer l'adhérence entre la résine photosensible négative (2) formée par le matériau de résine photosensible négative et le substrat de silicium (1).
(ZH)
一种负性光刻胶及其应用,负性光刻胶含有邻苯二酚基团。负性光刻胶涂覆并固化于硅基底(1)的表面形成负性光阻(2),硅基底(1)的表面具有羟基结构,负性光刻胶具有邻苯二酚基团,邻苯二酚基团中的羟基结构与硅基底(1)的羟基结构之间形成氢键结构。通过在负性光刻胶内加入带有邻苯二酚基团的化合物,使得邻苯二酚基团中的羟基与硅基底(1)中的羟基形成氢键,以提高由负性光刻胶形成的负性光阻(2)与硅基底(1)之间的粘附力。
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