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1. WO2020113763 - PREPARATION METHOD FOR THIN FILM TRANSISTOR

Publication Number WO/2020/113763
Publication Date 11.06.2020
International Application No. PCT/CN2019/070897
International Filing Date 08.01.2019
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 29/66772
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
66772Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 吕明仁 LU, Mingjen
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811466103.103.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARATION METHOD FOR THIN FILM TRANSISTOR
(FR) PROCÉDÉ DE PRÉPARATION DE TRANSISTOR À COUCHE MINCE
(ZH) 一种薄膜晶体管的制备方法
Abstract
(EN)
A preparation method for a thin film transistor, wherein sufficient hydrogen ions are available in an interlayer dielectric layer (307), and in the annealing process, the number of hydrogen ions diffused to active layers (302, 303) is sufficient, the hydrogen ions enter channels (3021, 3031) of the thin film transistor to fill unbonded or unsaturated bonds of polysilicon atoms, and to fill the defects in the channels (3021, 3031), so that the defects of the active layers (302, 303) can be repaired, the number of instability is reduced, and the mobility and the threshold voltage uniformity are improved.
(FR)
L’invention concerne un procédé de préparation d’un transistor à couche mince, suffisamment d’ions hydrogène étant disponibles dans une couche diélectrique intercouche (307), et durant le processus de recuit, le nombre d’ions hydrogène diffusés vers des couches actives (302, 303) étant suffisant, les ions hydrogène entrant dans des canaux (3021, 3031) du transistor à couche mince pour remplir des liaisons non liées ou insaturées d’atomes de polysilicium, et pour remplir les défauts dans les canaux (3021, 3031), de sorte que les défauts des couches actives (302, 303) puissent être réparés, le nombre d’instabilités étant réduit, et la mobilité et l’uniformité de tension de seuil étant améliorées.
(ZH)
一种薄膜晶体管的制备方法,层间介电层(307)内有充足的氢离子,在退火处理中,扩散至有源层(302、303)的氢离子数量足够多,氢离子进入薄膜晶体管的沟道(3021、3031)中填补多晶硅原子未结合键或未饱和键,填补沟道(3021、3031)中的缺陷,进而能够修补有源层(302、303)的缺陷,减少不稳态数目,提升迁移率及阈值电压均匀性。
Also published as
Latest bibliographic data on file with the International Bureau