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1. WO2020113747 - ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

Publication Number WO/2020/113747
Publication Date 11.06.2020
International Application No. PCT/CN2019/070021
International Filing Date 02.01.2019
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G02F 1/1368 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
CPC
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/1222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 27/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 江艺 JIANG, Yi
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201811466935.303.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
(FR) SUBSTRAT MATRICIEL ET SON PROCÉDÉ DE FABRICATION, ET DISPOSITIF D'AFFICHAGE
(ZH) 阵列基板及其制备方法、显示装置
Abstract
(EN)
Provided are an array substrate and a manufacturing method thereof, and a display device. A low temperature polysilicon comprises a base layer, a low temperature polysilicon layer, a gate insulation layer, a gate and an inter-level dielectric layer. The low temperature polysilicon layer is provided above the base layer. The gate insulation layer covers the low temperature polysilicon layer. The gate is provided at the gate insulation layer. The inter-level dielectric layer covers the gate and the gate insulation layer. In the manufacturing method of an array substrate, hydrogenation is performed on a low temperature polysilicon layer before deposition of an inter-level dielectric layer, and thus deposition of the inter-level dielectric layer can be directly performed in a high temperature environment following hydrogenation, thereby eliminating a rapid thermal annealing activation process in the art, simplifying an industrial procedure, and reducing energy consumption and costs. The display device using the array substrate of the present invention has a high resolution, a high response speed, a high brightness level, a high aperture ratio, and low energy consumption.
(FR)
L’invention concerne un substrat matriciel et son procédé de fabrication, et un dispositif d’affichage. Un polysilicium basse température comprend une couche de base, une couche de polysilicium basse température, une couche d'isolation de grille, une grille et une couche diélectrique inter-niveaux. La couche de polysilicium basse température est disposée au-dessus de la couche de base. La couche d'isolation de grille recouvre la couche de polysilicium basse température. La grille est disposée au niveau de la couche d'isolation de grille. La couche diélectrique inter-niveaux recouvre la grille et la couche d'isolation de grille. Dans le procédé de fabrication d'un substrat matriciel, une hydrogénation est effectuée sur une couche de polysilicium basse température avant le dépôt d'une couche diélectrique inter-niveaux, et ainsi le dépôt de la couche diélectrique inter-niveaux peut être effectué directement dans un environnement à haute température après hydrogénation, ce qui permet d'éliminer un processus d'activation de recuit thermique rapide dans l'état de la technique, de simplifier une procédure industrielle, et de réduire la consommation d'énergie et les coûts. Le dispositif d'affichage utilisant le substrat matriciel de la présente invention présente une résolution élevée, une vitesse de réponse élevée, un niveau de luminosité élevé, un rapport d'ouverture élevé et une faible consommation d'énergie.
(ZH)
本发明提供了一种阵列基板及其制备方法、显示装置。所述低温多晶硅包括基层、低温多晶硅层、栅极绝缘层、栅极以及层间介质层。所述低温多晶硅层设于所述基层上方。所述栅极绝缘层覆于所述低温多晶硅层上。所述栅极设于所述栅极绝缘层上。所述层间介质层覆于所述栅极和所述栅极绝缘层上。所述阵列基板制备方法在沉积层间介质层前对低温多晶硅层进行氢化,在氢化后的高温环境中直接沉积层间介质层,省去了现有技术中快速热退火法活化工艺,减少了工业流程,并且节约了能源及成本。所述显示装置采用了本发明的所述阵列基板,其具有高分辨率、反应速度快、高亮度、高开口率、低耗能等优点。
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