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1. WO2020113667 - MASK AND MASK PRODUCING METHOD

Publication Number WO/2020/113667
Publication Date 11.06.2020
International Application No. PCT/CN2018/121571
International Filing Date 17.12.2018
IPC
G03F 1/62 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
CPC
G03F 1/62
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Applicants
  • 惠科股份有限公司 HKC CORPORATION LIMITED [CN]/[CN]
Inventors
  • 吴川 WU, Chuan
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811480473.005.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MASK AND MASK PRODUCING METHOD
(FR) MASQUE ET PROCÉDÉ DE PRODUCTION DE MASQUE
(ZH) 光罩及光罩的制作方法
Abstract
(EN)
A mask and a mask producing method. The mask comprises: a semi-transmitting film layer; and a light shielding layer, disposed on the semi-transmitting film layer. A part of the semi-transmitting film layer is exposed to serve as a channel forming area; the semi-transmitting film layer in the channel forming area comprises an arc film layer and a non-arc film layer; the thickness of the arc film layer is greater than that of the non-arc film layer; the light shielding layer comprises a first light shielding layer and a second light shielding layer; the first light shielding layer and the second light shielding layer are respectively located at two sides of the channel forming area.
(FR)
L'invention concerne un masque et un procédé de production de masque. Le masque comprend une couche de film semi-émetteur et une couche de protection contre la lumière disposée sur la couche de film semi-émetteur. Une partie de la couche de film semi-émetteur est exposée de façon à servir de zone de formation de canal ; la couche de film semi-émetteur dans la zone de formation de canal comprend une couche de film d'arc et une couche de film sans arc ; l'épaisseur de la couche de film d'arc est supérieure à celle de la couche de film sans arc ; la couche de protection contre la lumière comprend une première couche de protection contre la lumière et une seconde couche de protection contre la lumière ; la première couche de protection contre la lumière et la seconde couche de protection contre la lumière sont respectivement situées sur deux côtés de la zone de formation de canal.
(ZH)
一种光罩及光罩的制作方法,其中光罩包括:半透膜层;以及遮光层,设置在所述半透膜层上,露出部分所述半透膜层以作为沟道形成区;所述沟道形成区中的半透膜层包括弧形膜层和非弧形膜层,所述弧形膜层的厚度大于所述非弧形膜层的厚度;所述遮光层包括第一遮光层和第二遮光层,所述第一遮光层和所述第二遮光层分别位于所述沟道形成区的两侧。
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