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1. WO2020113613 - THIN FILM TRANSISTOR STRUCTURE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

Publication Number WO/2020/113613
Publication Date 11.06.2020
International Application No. PCT/CN2018/120171
International Filing Date 11.12.2018
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 29/0688
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0688characterised by the particular shape of a junction between semiconductor regions
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 惠科股份有限公司 HKC CORPORATION LIMITED [CN]/[CN]
Inventors
  • 莫琼花 MO, Qionghua
  • 卓恩宗 CHO, En-Tsung
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811466314.503.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM TRANSISTOR STRUCTURE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
(FR) STRUCTURE DE TRANSISTOR À COUCHES MINCES, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE
(ZH) 薄膜晶体管结构及其制作方法、显示装置
Abstract
(EN)
Provided are a thin film transistor structure, a manufacturing method thereof, and a display device. The method comprises: providing a substrate (10), and sequentially forming a gate (20), a gate insulating layer (30), an active layer (40), a doped layer (50), a source (610), a drain (620) and a channel region (70) on the substrate (10); placing the channel region (70) in a preset gas atmosphere for heating treatment; wherein, the channel region (70) is placed in a nitrogen atmosphere to heat for a first preset time, in a mixed atmosphere of nitrogen and ammonia to heat for a second preset time, in an ammonia atmosphere to heat for a third preset time; or first heating the channel region (70) for a fourth preset time, finally placing in the ammonia atmosphere to heat for a fifth preset time.
(FR)
L’invention concerne une structure de transistor à couches minces, son procédé de fabrication et un dispositif d’affichage. Le procédé consiste à : prendre un substrat (10), et former séquentiellement une grille (20), une couche d'isolation de grille (30), une couche active (40), une couche dopée (50), une source (610), un drain (620) et une zone de canal (70) sur le substrat (10) ; placer la zone de canal (70) dans une atmosphère gazeuse prédéfinie pour un traitement de chauffage, la zone de canal (70) étant placée dans une atmosphère d'azote pour un chauffage pendant un premier temps prédéfini, dans une atmosphère de mélange d'azote et d'ammoniac pour un chauffage pendant un deuxième temps prédéfini et dans une atmosphère d'ammoniac pour un chauffage pendant un troisième temps prédéfini, ou la zone de canal (70) étant d'abord chauffée pendant un quatrième temps prédéfini, et finalement placée dans l'atmosphère d'ammoniac pour un chauffage pendant un cinquième temps prédéfini.
(ZH)
一种薄膜晶体管结构及其制作方法、显示装置。该方法包括:提供一基板(10),并在基板(10)上依次形成栅极(20)、栅极绝缘层(30)、有源层(40)、掺杂层(50)、源极(610)、漏极(620)及沟道区(70);将沟道区(70)置于预设的气体氛围中进行加热处理;其中,将沟道区(70)置于氮气的气氛中加热第一预设时间,在氮气和氨气的混合气氛中加热第二预设时间,在氨气的气氛中加热第三预设时间;或先对沟道区(70)加热第四预设时间,最后置于氨气的气氛中加热第五预设时间。
Also published as
Latest bibliographic data on file with the International Bureau