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1. WO2020113599 - ACTIVE SWITCH AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

Publication Number WO/2020/113599
Publication Date 11.06.2020
International Application No. PCT/CN2018/120136
International Filing Date 10.12.2018
IPC
G02F 1/1343 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements
1343Electrodes
G02F 1/1362 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
G02F 1/134309
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements; ; Manufacturing methods
1343Electrodes
134309characterised by their geometrical arrangement
G02F 1/136286
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136286Wiring, e.g. gate line, drain line
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Applicants
  • 惠科股份有限公司 HKC CORPORATION LIMITED [CN]/[CN]
Inventors
  • 宋振莉 SONG, Zhenli
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811465751.503.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ACTIVE SWITCH AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
(FR) COMMUTATEUR ACTIF ET SON PROCÉDÉ DE FABRICATION, ET DISPOSITIF D'AFFICHAGE
(ZH) 主动开关及其制作方法、显示装置
Abstract
(EN)
The present invention relates to an active switch and a manufacturing method thereof, and a display device. The active switch comprises: a substrate; a gate formed at the substrate; a gate insulation layer formed at the gate; an oxide semiconductor layer formed on the gate insulation layer at a position corresponding to the gate; a source and a drain formed at two side edges of the oxide semiconductor layer; a first protection layer formed at the source and the drain; an planarization layer formed at the first protection layer; a common electrode formed on the planarization layer at a position corresponding to the gate; and an electrode stabilization layer formed at the common electrode, wherein a projection of the electrode stabilization layer on the substrate is overlapped with a projection of the gate on the substrate.
(FR)
La présente invention concerne un commutateur actif et son procédé de fabrication, et un dispositif d'affichage. Le commutateur actif comprend : un substrat ; une grille formée au niveau du substrat ; une couche d'isolation de grille formée au niveau de la grille ; une couche semi-conductrice d'oxyde formée sur la couche d'isolation de grille à une position correspondant à la grille ; une source et un drain formés au niveau de deux bords latéraux de la couche semi-conductrice d'oxyde ; une première couche de protection formée au niveau de la source et du drain ; une couche de planarisation formée au niveau de la première couche de protection ; une électrode commune formée sur la couche de planarisation à une position correspondant à la grille ; et une couche de stabilisation d'électrode formée au niveau de l'électrode commune, une projection de la couche de stabilisation d'électrode sur le substrat étant chevauchée par une projection de la grille sur le substrat.
(ZH)
本申请涉及一种主动开关及其制作方法、显示装置。该主动开关包括基板;栅极,形成于基板上;栅极绝缘层,形成于栅极上;氧化物半导体层,形成于栅极绝缘层对应于栅极的上方;源极、漏极,形成于氧化物半导体层的两侧边沿上;第一保护层,形成于源极、漏极上;平坦层,形成于第一保护层上;公共电极,形成于平坦层对应于栅极的上方;电极稳定层,形成于公共电极上;其中,电极稳定层在基板上的投影与栅极在基板上的投影有交叠。
Also published as
Latest bibliographic data on file with the International Bureau