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1. WO2020113595 - ACTIVE SWITCH AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

Publication Number WO/2020/113595
Publication Date 11.06.2020
International Application No. PCT/CN2018/120042
International Filing Date 10.12.2018
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
CPC
H01L 29/0847
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
0843Source or drain regions of field-effect devices
0847of field-effect transistors with insulated gate
H01L 29/1604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1604Amorphous materials
H01L 29/42384
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42384for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
H01L 29/66765
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
H01L 29/78609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78609for preventing leakage current
H01L 29/78618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78618characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Applicants
  • 惠科股份有限公司 HKC CORPORATION LIMITED [CN]/[CN]
Inventors
  • 莫琼花 MO, Qionghua
  • 卓恩宗 CHO, En-Tsung
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811466312.603.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ACTIVE SWITCH AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS
(FR) INTERRUPTEUR ACTIF ET SON PROCÉDÉ DE FABRICATION, ET APPAREIL D'AFFICHAGE
(ZH) 主动开关及其制作方法、显示装置
Abstract
(EN)
Disclosed are an active switch and a manufacturing method therefor, and a display apparatus. The manufacturing method for an active switch comprises: sequentially forming a gate (20), a gate insulation layer (30), an active layer (40), a semiconductor composite layer (50), and a source and a drain (610, 620) on a substrate (10), wherein the semiconductor composite layer (50) comprises a first N-type heavily doped amorphous silicon layer (510), a first N-type lightly doped amorphous silicon layer (520), a second N-type heavily doped amorphous silicon layer (530) and a second N-type lightly doped amorphous silicon layer (540), wherein same are stacked in sequence; and the ion doping concentration of the first N-type heavily doped amorphous silicon layer (510) is lower than that of the second N-type heavily doped amorphous silicon layer (530), and the ion doping concentration of the first N-type lightly doped amorphous silicon layer (520) is higher than that of the second N-type lightly doped amorphous silicon layer (540).
(FR)
L'invention concerne un interrupteur actif et son procédé de fabrication, et un appareil d'affichage. Le procédé de fabrication d'un interrupteur actif comprend : la formation séquentielle d'une grille (20), d'une couche d'isolation de grille (30), d'une couche active (40), d'une couche composite semi-conductrice (50), et d'une source et d'un drain (610, 620) sur un substrat (10), la couche composite semi-conductrice (50) comprenant une première couche de silicium amorphe fortement dopée du type N (510), une première couche de silicium amorphe faiblement dopée du type N (520), une seconde couche de silicium amorphe fortement dopée du type N (530) et une seconde couche de silicium amorphe faiblement dopée du type N (540), celles-ci étant empilées en séquence ; et la concentration de dopage ionique de la première couche de silicium amorphe fortement dopée du type N (510) étant inférieure à celle de la seconde couche de silicium amorphe fortement dopée du type N (530), et la concentration de dopage ionique de la première couche de silicium amorphe faiblement dopée du type N (520) étant supérieure à celle de la seconde couche de silicium amorphe faiblement dopée du type N (540).
(ZH)
一种主动开关及其制作方法、显示装置。该主动开关的制作方法包括:在基板(10)上依次形成栅极(20)、栅极绝缘层(30)、有源层(40)、半导体复合层(50)及源漏极(610, 620);半导体复合层(50)包括依次层叠的第一N型重掺杂非晶硅层(510)、第一N型轻掺杂非晶硅层(520)、第二N型重掺杂非晶硅层(530)及第二N型轻掺杂非晶硅层(540);第一N型重掺杂非晶硅层(510)比第二N型重掺杂非晶硅层(530)的离子掺杂浓度低,第一N型轻掺杂非晶硅层(520)比第二N型轻掺杂非晶硅层(540)的离子掺杂浓度高。
Also published as
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