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1. WO2020112866 - SWITCH BRANCH STRUCTURE

Publication Number WO/2020/112866
Publication Date 04.06.2020
International Application No. PCT/US2019/063392
International Filing Date 26.11.2019
IPC
H01L 23/522 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H03K 17/10 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
10Modifications for increasing the maximum permissible switched voltage
H03K 17/693 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
51characterised by the use of specified components
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
H04B 1/44 2006.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
1Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
40Circuits
44Transmit/receive switching
CPC
H01L 21/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 23/5223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5222Capacitive arrangements or effects of, or between wiring layers
5223Capacitor integral with wiring layers
H01L 23/5283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Geometry or; layout of the interconnection structure
5283Cross-sectional geometry
H01L 27/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
H01L 27/1203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1203the substrate comprising an insulating body on a semiconductor body, e.g. SOI
H01L 27/1255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1255integrated with passive devices, e.g. auxiliary capacitors
Applicants
  • QORVO US, INC. [US]/[US]
Inventors
  • GIBSON, Samuel
Agents
  • WITHROW, Benjamin, S.
Priority Data
16/200,96527.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SWITCH BRANCH STRUCTURE
(FR) STRUCTURE DE BRANCHE DE COMMUTATEUR
Abstract
(EN)
A switch branch structure has an input terminal, an output terminal, and a series stack of an N-number of transistors formed in an active device layer within a first plane, wherein a first one of the N-number of transistors is coupled to the input terminal, and an nth one of the N-number of transistors is coupled to the output terminal, where n is a positive integer greater than one. A metal layer element has a planar body with a proximal end that is electrically coupled to the input terminal and distal end that is electrically open, wherein the planar body is within a second plane spaced from and in parallel with the first plane such that the planar body capacitively couples a radio frequency signal at the input terminal to between 10% and 90% of the N-number of transistors when the switch branch structure is in an off-state.
(FR)
La présente invention concerne une structure de branche de commutateur comprenant une borne d'entrée, une borne de sortie et une pile en série d'un nombre N de transistors formée dans une couche de dispositif active à l'intérieur d'un premier plan, un premier transistor parmi le nombre N de transistors étant accouplé à la borne d'entrée, et un nième transistor parmi le nombre N de transistors étant accouplé à la borne de sortie, n étant un nombre entier positif supérieur à un. Un élément de couche métallique présente un corps plat avec une extrémité proximale qui est électriquement couplée à la borne d'entrée et une extrémité distale qui est électriquement ouverte, le corps plat étant à l'intérieur d'un second plan espacé du premier plan et parallèle à celui-ci de telle sorte que le corps plat couple de manière capacitive un signal de radiofréquence au niveau de la borne d'entrée à 10 % à 90 % du nombre N de transistors lorsque la structure de branche de commutateur est dans un état bloqué.
Also published as
Latest bibliographic data on file with the International Bureau